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DM355SDZCEA135

Texas Instruments

DM355SDZCEA135 by Texas Instruments

Texas Instruments DM355SDZCEA135 is a 32-bit microprocessor with 8192 RAM words. It operates at supply voltages of 1.3V, 1.8V, and 3.3V, suitable for MICROPROCESSOR CIRCUIT applications. The package style is GRID ARRAY with a low profile and fine pitch design, making it ideal for compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,751 parts In-Stock

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6,751

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Digiode

USA . 3,536 parts In-Stock

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3,536

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Distributors (Availability)

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AZTECH Wire

Italy . 742 parts In-Stock

1+ parts

$16.078

100+ parts

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742

$16.078

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One Stop Electronics

USA . 720 parts In-Stock

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$22.000

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720

$22.000

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Corohmni

South Africa . 2,528 parts In-Stock

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$33.285

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2,528

$33.285

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Native Components

USA . 61 parts In-Stock

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$53.941

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$51.784

61

$53.941

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$51.784

Parana Technologies

USA . 864 parts In-Stock

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$55.072

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864

$55.072

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Northwest PG Solutions

USA . 865 parts In-Stock

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$59.335

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865

$59.335

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ChromeModa Solutions

Germany . 4,581 parts In-Stock

1+ parts

$61.879

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$50.741

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4,581

$61.879

$50.741

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IDEA Electronic Components Group

UK . 2,235 parts In-Stock

1+ parts

$61.879

100+ parts

$58.785

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$55.691

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2,235

$61.879

$58.785

$55.691

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Corphita

USA . 4,483 parts In-Stock

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4,483

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Microchip USA

USA . 1,126 parts In-Stock

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1,126

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DigiPath Technology Company

USA . 792 parts In-Stock

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$55.790

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792

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$55.790

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Overview

Experience top-notch quality and performance with the DM355SDZCEA135 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unmatched reliability and innovation in their products. This versatile microprocessor circuit is perfect for a wide range of applications, offering customers seamless integration and efficiency. With a powerful 32-bit design and a variety of supply voltage options, this product provides exceptional value and benefits to users looking for cutting-edge technology. Upgrade your projects with the DM355SDZCEA135 and experience excellence like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is common and provides good protection for the internal components of the product.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 1.365 V

Provides a stable power supply within a safe operating range for the product.

Package Shape: SQUARE

Square shape allows for efficient use of space on the circuit board.

Bit Size: 32

32-bit processing capability allows for handling of complex functions and operations efficiently.

Power Supplies (V): 1.3,1.8,3.3

Supports multiple voltage options for flexibility in different usage scenarios.

No. of Terminals: 337

Plenty of terminals for connecting to various components and peripherals.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

This style offers a compact design with high connectivity options for integration in various systems.

Minimum Supply Voltage: 1.235 V

Ensures reliable operation even at lower supply voltages.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and durability for the terminals.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy connection to the circuit board.

Maximum Seated Height: 1.3 mm

Low profile design saves space in the overall system setup.

RAM Words: 8192

Sufficient RAM capacity for storing and processing data effectively.

Width: 13 mm

Compact width allows for efficient placement on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a reasonable duration during manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for reliable soldering and reworking.

Length: 13 mm

Compact length contributes to space-saving design considerations.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Microprocessor circuit enhances the product's processing capabilities and versatility.

Technology: CMOS

CMOS technology offers low power consumption and high integration capabilities.

Terminal Form: BALL

Ball terminals provide good connectivity and reliability in mounting.

Nominal Supply Voltage: 1.3 V

Stable nominal supply voltage for consistent operation.

Terminal Pitch: 0.65 mm

Fine terminal pitch enables high-density packaging on the circuit board.

Format: FIXED POINT

Fixed-point format for efficient numerical calculations and processing.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates moderate sensitivity to moisture, requiring standard handling precautions.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DM355SDZCEA135 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 1.8V AND 3.3V SUPPLY FOR I/O

Bit Size:

32

Format:

FIXED POINT

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

13 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

337

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

Maximum Seated Height:

1.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Peripheral IC Type:

Trade Compliance

DM355SDZCEA135 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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