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DM355SZCE216

Texas Instruments

DM355SZCE216 by Texas Instruments

The Texas Instruments DM355SZCE216 is a 32-bit microprocessor with 337 terminals and 32768 RAM words. Operating at temperatures from 0 to 85°C, it has a max supply voltage of 1.365V and supports power supplies of 1.3V, 1.8V, and 3.3V. This MICROPROCESSOR CIRCUIT is ideal for applications requiring a low-profile GRID ARRAY package with 0.65mm terminal pitch.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,897 parts In-Stock

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7,897

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Digiode

USA . 4,252 parts In-Stock

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4,252

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Distributors (Availability)

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AZTECH Wire

Italy . 855 parts In-Stock

1+ parts

$6.174

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855

$6.174

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Native Components

USA . 547 parts In-Stock

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$20.413

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547

$20.413

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Northwest PG Solutions

USA . 673 parts In-Stock

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$22.455

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$20.209

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673

$22.455

$20.209

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One Stop Electronics

USA . 1,200 parts In-Stock

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$28.000

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1,200

$28.000

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Parana Technologies

USA . 2,299 parts In-Stock

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$62.628

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2,299

$62.628

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DigiPath Technology Company

USA . 1,706 parts In-Stock

1+ parts

$68.962

100+ parts

$63.445

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1,706

$68.962

$63.445

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ChromeModa Solutions

Germany . 1,105 parts In-Stock

1+ parts

$70.369

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$57.703

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1,105

$70.369

$57.703

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IDEA Electronic Components Group

UK . 180 parts In-Stock

1+ parts

$70.369

100+ parts

$66.851

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$63.332

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180

$70.369

$66.851

$63.332

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Corohmni

South Africa . 3,123 parts In-Stock

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$70.797

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$70.797

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Corphita

USA . 3,640 parts In-Stock

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Overview

Experience the innovation and quality of Texas Instruments with the DM355SZCE216, a cutting-edge microprocessor circuit designed for a wide range of applications. With a powerful 32-bit architecture and a compact square package, this device offers customers unparalleled performance and reliability. Whether you're working on IoT devices, consumer electronics, or industrial automation, the DM355SZCE216 provides the perfect balance of power efficiency and functionality. Trust in Texas Instruments to deliver top-of-the-line solutions for all your processing needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and cost-effective, making this product suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum Supply Voltage: 1.365 V

The maximum supply voltage of 1.365 V ensures safe operation and protects the product from damage due to overvoltage.

Bit Size: 32

A 32-bit architecture provides enhanced processing power and performance, making this product suitable for demanding applications.

Power Supplies (V): 1.3, 1.8, 3.3

Support for multiple power supply voltages allows for flexible integration into different systems and environments.

No. of Terminals: 337

The high number of terminals facilitates connectivity and communication with other components, enhancing the product's functionality.

Width: 13 mm

Compact width of 13 mm saves space on the PCB and allows for dense packing of components.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85°C ensures reliable performance in challenging thermal conditions.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The inclusion of a microprocessor circuit enhances the product's processing capabilities and enables sophisticated functions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DM355SZCE216 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bit Size:

32

Format:

FIXED POINT

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

13 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

337

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,1.8,3.3

Qualification:

Not Qualified

RAM Words:

32768

Maximum Seated Height:

1.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Peripheral IC Type:

Trade Compliance

DM355SZCE216 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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