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74V2T04STR

STMicroelectronics

74V2T04STR by STMicroelectronics

74V2T04STR by STMicroelectronics is a CMOS logic gate with a propagation delay of just 9.5 ns, ideal for high-speed applications. It operates at a nominal voltage of 5V and supports up to 8A output current. This compact, low-profile device is perfect for military-grade electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,682 parts In-Stock

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7,682

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Digiode

USA . 2,321 parts In-Stock

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2,321

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Anansix

USA . 80 parts In-Stock

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80

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Distributors (Availability)

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Microchip USA

USA . 481 parts In-Stock

1+ parts

$0.689

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-

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481

$0.689

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Northwest PG Solutions

USA . 759 parts In-Stock

1+ parts

$2.674

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759

$2.674

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AZTECH Wire

Italy . 1,029 parts In-Stock

1+ parts

$11.780

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1,029

$11.780

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IDEA Electronic Components Group

UK . 1,390 parts In-Stock

1+ parts

$24.219

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-

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$21.797

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1,390

$24.219

-

$21.797

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MKK Technologies

India . 181 parts In-Stock

1+ parts

$45.542

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181

$45.542

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DigiPath Technology Company

USA . 181 parts In-Stock

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$45.542

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181

$45.542

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Component Stockers USA

USA . 403 parts In-Stock

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$99.990

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403

$99.990

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A-Z Elektronik GmbH

Germany . 7,007 parts In-Stock

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7,007

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Corphita

USA . 3,163 parts In-Stock

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3,163

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Parana Technologies

USA . 1,799 parts In-Stock

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$28.958

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1,799

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$28.958

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Native Components

USA . 640 parts In-Stock

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$2.358

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640

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$2.358

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Overview

Elevate your designs with the 74V2T04STR from STMicroelectronics, a trusted leader in high-quality semiconductor solutions. This versatile logic gate delivers exceptional performance with ultra-low propagation delays and reliable operation across a wide temperature range, making it ideal for demanding applications in automotive, industrial, and consumer electronics. Benefit from robust functionality packed in a compact, low-profile package that simplifies integration while ensuring durability and efficiency in your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and protection against environmental factors, enhancing the product's longevity.

Propagation Delay At Nominal Supply: 9.5 ns

A low propagation delay ensures fast switching speeds, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy integration into modern PCB designs, saving space and enabling automated assembly.

No. of Functions: 3

Offering multiple functions in one package enhances versatility and reduces component count on the board.

Package Shape: RECTANGULAR

The rectangular shape is optimal for efficient layout and space optimization in electronic designs.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V operation is ideal for compatibility with a wide range of digital circuits and systems.

Load Capacitance (CL): 50 pF

A low load capacitance allows for higher speed operation and reduces power consumption, making it efficient.

Power Supplies (V): 5

Designed to operate on a common power supply voltage of 5V, providing convenience in various applications.

No. of Terminals: 8

Eight terminals offer sufficient connectivity for various applications while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The small outline and low profile design facilitate space-saving in dense circuit layouts.

Maximum I (ol): 8 Amp

A high output current capability allows for driving larger loads, providing greater application flexibility.

Propagation Delay (tpd): 9.5 ns

Consistent propagation delay ensures reliable performance for fast digital signals.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures ensures reliability in demanding environments, particularly in military applications.

Minimum Operating Temperature: -55 °C

A wide operational temperature range increases usability in various climates and harsh environments.

Terminal Finish: TIN

Tin finish provides good solderability and resistance to corrosion, ensuring solid connections.

Terminal Position: DUAL

Dual terminal positioning allows flexibility in PCB layout and design.

Maximum Seated Height: 1.45 mm

A low seated height minimizes space requirements on the PCB, enabling more compact designs.

Width: 1.625 mm

Narrow width further aids in space-efficient design, making it suitable for compact electronic applications.

Minimum Supply Voltage (Vsup): 4.5 V

Operational voltage as low as 4.5V ensures functionality across varying supply conditions.

Peak Reflow Temperature °C: 260

The ability to withstand high reflow temperatures is ideal for surface mounting processes without damaging the component.

Length: 2.9 mm

Compact length allows integration in tight spaces, making it suitable for small form factor designs.

Temperature Grade: MILITARY

Designed for military applications, this component guarantees reliability and robustness under extreme conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, crucial for modern digital circuits.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and robust mechanical connections, enhancing overall reliability.

Packing Method: TR

Tape and reel packing optimizes handling and automation in manufacturing processes.

Terminal Pitch: 0.65 mm

A fine terminal pitch allows for denser packing of components on PCBs, ideal for miniaturized designs.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a buffer for voltage fluctuations, ensuring stable operation.

Technical Specifications

Logic Gates 74V2T04STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.1

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

9.5 ns

Propagation Delay (tpd):

9.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.625 mm

Trade Compliance

74V2T04STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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