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74LX1G70STR

STMicroelectronics

74LX1G70STR by STMicroelectronics

74LX1G70STR by STMicroelectronics is a CMOS logic gate with a propagation delay of just 4.2 ns, operating b/w 1.65V and 5.5V. It features a compact low-profile package and supports military-grade temperatures from -55 °C to 125°C. Ideal for high-speed applications in space-constrained environments.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 4,533 parts In-Stock

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Digiode

USA . 2,038 parts In-Stock

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Anansix

USA . 1,599 parts In-Stock

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Contempo Components LLC

USA . 519 parts In-Stock

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Native Components

USA . 383 parts In-Stock

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$0.213

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$0.204

383

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Northwest PG Solutions

USA . 2,129 parts In-Stock

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$0.234

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$0.206

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Microchip USA

USA . 406 parts In-Stock

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$0.722

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406

$0.722

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AZTECH Wire

Italy . 641 parts In-Stock

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$16.490

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$16.490

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IDEA Electronic Components Group

UK . 1,566 parts In-Stock

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$21.493

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$19.344

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MKK Technologies

India . 709 parts In-Stock

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$40.416

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$40.416

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DigiPath Technology Company

USA . 709 parts In-Stock

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$40.416

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$40.416

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Corphita

USA . 3,531 parts In-Stock

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Parana Technologies

USA . 2,300 parts In-Stock

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$25.698

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Overview

Unlock unparalleled performance with the 74LX1G70STR from STMicroelectronics! Designed for precision in logic applications, this cutting-edge component delivers swift propagation and exceptional reliability. With ST's renowned commitment to quality, you gain a robust solution that thrives in demanding environments. Perfect for automotive, industrial, and consumer electronics, it enhances your designs, ensuring efficiency and longevity. Choose excellence; choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, making it suitable for various applications.

Propagation Delay At Nominal Supply: 4.2 ns

A low propagation delay ensures faster switching times, enhancing the performance in high-speed digital circuits.

Surface Mount: YES

Surface mount technology allows for compact design and easier assembly on printed circuit boards, saving space and reducing manufacturing costs.

Package Shape: RECTANGULAR

The rectangular package shape is optimal for space efficiency and aligns well with standard PCB layouts.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V helps reduce power consumption, making it ideal for battery-operated devices.

Load Capacitance (CL): 50 pF

A load capacitance of 50 pF allows compatibility with a wide range of circuit designs, ensuring reliable signal integrity.

Power Supplies (V): 3.3

Support for 3.3V power supplies is common in modern digital systems, enhancing compatibility with prevalent technology.

No. of Terminals: 5

Having 5 terminals provides essential functionality while keeping the design simple, suitable for compact applications.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The small outline and low profile design reduce space on the PCB, making it an excellent choice for compact electronic devices.

Maximum I (ol): 24 Amp

A high output current capacity of 24 Amps allows it to drive larger loads and enhances versatility in applications.

Propagation Delay (tpd): 12 ns

A propagation delay of 12 ns provides flexibility for high-speed operations, making it suitable for rapid switching applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this product is robust and can operate in harsh environments.

Minimum Operating Temperature: -55 °C

The capability to function at low temperatures (-55 °C) enhances reliability in extreme conditions, ideal for military and aerospace applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish ensures excellent corrosion resistance and reliable connections, contributing to long-term performance.

Terminal Position: DUAL

Dual terminal configuration provides versatile mounting options, accommodating different PCB designs.

Maximum Seated Height: 1.45 mm

A maximum seated height of 1.45 mm contributes to a low-profile design, ideal for space-constrained applications.

Width: 1.625 mm

Compact width of 1.625 mm enhances fitting into small spaces on PCBs, adding to the flexibility of design.

Minimum Supply Voltage (Vsup): 1.65 V

A minimum supply voltage of 1.65V facilitates operation in various low-voltage environments, enhancing battery efficiency.

Length: 2.9 mm

The length of 2.9 mm is optimized for small form factor applications, enabling tighter PCB layouts.

Temperature Grade: MILITARY

Designed for military applications ensures high reliability and performance in demanding conditions.

Technology: CMOS

CMOS technology allows for low power consumption and high integration, suitable for modern electronic systems.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and enhances reliability in electronic connections.

Packing Method: TR

Tape and reel packing method offers convenience for automated assembly processes, reducing production time.

Terminal Pitch: 0.95 mm

A terminal pitch of 0.95 mm allows for high density on PCBs, maximizing space utilization in compact designs.

Maximum Supply Voltage (Vsup): 5.5 V

Support for a maximum supply voltage of 5.5V provides flexibility in power supply choices, enhancing design versatility.

Technical Specifications

Logic Gates 74LX1G70STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

TTL/H/L

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.625 mm

Trade Compliance

74LX1G70STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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