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SN74LVC2G17DBVTE4

Texas Instruments

SN74LVC2G17DBVTE4 by Texas Instruments

SN74LVC2G17DBVTE4 by Texas Instruments is a logic gate with 2 functions, 5.4 ns propagation delay, and 3.3V nominal voltage. It is used in industrial applications due to its CMOS technology, Schmitt trigger feature, and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,888 parts In-Stock

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Digiode

USA . 3,111 parts In-Stock

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Nova Conductors

Japan . 82 parts In-Stock

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82

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Parana Technologies

USA . 96 parts In-Stock

1+ parts

$13.544

100+ parts

$1,257.768

1k+ parts

$12.190

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96

$13.544

$1,257.768

$12.190

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DigiPath Technology Company

USA . 779 parts In-Stock

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$14.914

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-

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779

$14.914

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ChromeModa Solutions

Germany . 5,726 parts In-Stock

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$15.218

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$12.479

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IDEA Electronic Components Group

UK . 1,057 parts In-Stock

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$15.218

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$14.457

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$13.696

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$15.218

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$13.696

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Advanced Electronics

New Zealand . 900 parts In-Stock

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$16.255

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$15.443

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$15.443

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900

$16.255

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$15.443

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AZTECH Wire

Italy . 708 parts In-Stock

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$16.335

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Semicontronic

India . 1,027 parts In-Stock

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$18.000

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$17.550

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$17.460

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Corohmni

South Africa . 638 parts In-Stock

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$25.254

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One Stop Electronics

USA . 1,370 parts In-Stock

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$51.000

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Ampacity Inc.

Singapore . 1,115 parts In-Stock

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$55.000

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Continental Prestige Electronics

USA . 2,176 parts In-Stock

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Robosynatics

Brazil . 2,000 parts In-Stock

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Lucentia Tech

USA . 2,000 parts In-Stock

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$1.610

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$1.610

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$1.610

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$1.610

Corphita

USA . 552 parts In-Stock

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552

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Argo Parts USA

USA . 462 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Experience seamless logic gate operation with the SN74LVC2G17DBVTE4 by Texas Instruments. Known for their superior quality and innovation, Texas Instruments delivers reliable components that meet the highest industry standards. Ideal for a wide range of applications, this logic gate offers fast propagation delay and low power consumption, making it perfect for demanding projects where efficiency is key. Trust Texas Instruments to provide you with the tools you need for success in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for portable electronics.

Propagation Delay At Nominal Supply: 5.4 ns

The low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

The surface mount capability offers easy installation and saves space on the circuit board.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a common supply voltage of 3.3V makes integration with other components seamless.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient packing and utilization of space within the electronic device.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in harsh environments.

Technology: CMOS

The use of CMOS technology results in low power consumption and high noise immunity, making this logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates SN74LVC2G17DBVTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.4 ns

Propagation Delay (tpd):

9.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

SN74LVC2G17DBVTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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