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74LX1G07BJR

STMicroelectronics

74LX1G07BJR by STMicroelectronics

74LX1G07BJR by STMicroelectronics is a CMOS logic gate with an open-drain output, ideal for low-voltage applications. It operates b/w 1.65V and 5.5V, features a max I(ol) of 24A, and has a fast propagation delay of just 8.3 ns. Its compact design suits industrial environments with temp ranges from -40 °C to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,562 parts In-Stock

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4,562

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Digiode

USA . 3,711 parts In-Stock

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3,711

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Anansix

USA . 1,283 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 947 parts In-Stock

1+ parts

$0.389

100+ parts

-

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$0.374

947

$0.389

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$0.374

Northwest PG Solutions

USA . 1,788 parts In-Stock

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$0.428

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$0.378

1,788

$0.428

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$0.378

IDEA Electronic Components Group

UK . 143 parts In-Stock

1+ parts

$27.692

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-

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$24.923

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143

$27.692

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$24.923

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MKK Technologies

India . 20 parts In-Stock

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$52.073

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20

$52.073

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DigiPath Technology Company

USA . 20 parts In-Stock

1+ parts

$52.073

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20

$52.073

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Corphita

USA . 3,701 parts In-Stock

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3,701

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Parana Technologies

USA . 1,545 parts In-Stock

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$33.110

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1,545

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$33.110

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Overview

Unlock the potential of your designs with the 74LX1G07BJR from STMicroelectronics! This high-quality logic gate blends exceptional performance and reliability, making it ideal for demanding industrial applications. Designed for seamless integration, its compact size and efficient power management reduce board space while enhancing overall system efficiency. Trust in STMicroelectronics’ legacy of innovation to deliver unmatched value and elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides protection against environmental factors, ensuring the longevity and reliability of the component.

Surface Mount: YES

Surface mount capability allows for efficient space utilization on circuit boards and facilitates automated assembly processes.

Package Shape: SQUARE

The square shape supports various layout designs and offers a compact footprint for easy integration.

Nominal Supply Voltage / Vsup: 1.8 V

Low nominal supply voltage is ideal for power-sensitive applications, contributing to energy efficiency.

Power Supplies: 3.3 V

Supports a standard 3.3V power supply, making it compatible with most contemporary digital circuits.

No. of Terminals: 4

The 4-terminal configuration is sufficient for simple logic functions while minimizing the complexity of PCB layout.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This style allows for high-density connections and saves valuable space on PCBs, suitable for modern compact designs.

Maximum I (ol): 24 Amp

High output current capability supports robust performance in demanding applications.

Propagation Delay (tpd): 8.3 ns

Fast propagation delay ensures high-speed communication, making it suitable for high-frequency applications.

Maximum Operating Temperature: 85 °C

Wide maximum operating temperature range provides reliability in various environments, including industrial applications.

Output Characteristics: OPEN-DRAIN

Open-drain configuration offers flexibility in interfacing with other logic families and reduces design complexity.

Minimum Operating Temperature: -40 °C

Extreme low-temperature tolerance makes this device suitable for applications in harsh or outdoor conditions.

Terminal Position: BOTTOM

Bottom terminal positioning improves thermal performance and allows for better power dissipation.

Maximum Seated Height: 0.625 mm

Low seated height assists in maintaining a slim profile for space-constrained applications.

Width: 0.87 mm

Compact width facilitates integration into tight spaces on printed circuit boards.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage enhances compatibility with low-power applications and devices.

Length: 0.87 mm

Short length contributes to an overall compact design, further optimizing PCB layouts.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade performance, ensuring reliability in demanding environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it ideal for battery-powered applications.

Terminal Form: BALL

Ball terminal form enhances solder joint reliability and improves assembly yields during manufacturing.

Packing Method: TR

Tray packing facilitates easy handling and storage, important for efficient production processes.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for high density interconnections, accommodating advanced circuit designs.

Maximum Supply Voltage (Vsup): 5.5 V

Versatile maximum supply voltage ensures compatibility with a wide range of systems and applications.

Technical Specifications

Logic Gates 74LX1G07BJR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Additional Features:

DUMMY VAL

Family:

TTL/H/L

JESD-30 Code:

S-PBGA-B4

Length:

.87 mm

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA4,2X2,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay (tpd):

8.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.625 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

.87 mm

Trade Compliance

74LX1G07BJR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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