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74LX1G05STR

STMicroelectronics

74LX1G05STR by STMicroelectronics

74LX1G05STR from STMicroelectronics is a CMOS logic gate with a propagation delay of just 4.2 ns and operates b/w 1.65V to 5.5V. Its compact design features a low profile, making it ideal for space-constrained applications. With an open-drain output, it's perfect for interfacing in military-grade electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,995 parts In-Stock

1+ parts

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5,995

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Digiode

USA . 2,800 parts In-Stock

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2,800

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Anansix

USA . 1,973 parts In-Stock

1+ parts

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1,973

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 345 parts In-Stock

1+ parts

$0.140

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-

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345

$0.140

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Native Components

USA . 855 parts In-Stock

1+ parts

$0.343

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-

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$0.329

855

$0.343

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$0.329

Northwest PG Solutions

USA . 216 parts In-Stock

1+ parts

$0.377

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-

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$0.333

216

$0.377

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$0.333

AZTECH Wire

Italy . 567 parts In-Stock

1+ parts

$14.620

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567

$14.620

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IDEA Electronic Components Group

UK . 2,369 parts In-Stock

1+ parts

$23.418

100+ parts

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$21.076

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2,369

$23.418

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$21.076

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MKK Technologies

India . 1,702 parts In-Stock

1+ parts

$44.035

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1,702

$44.035

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DigiPath Technology Company

USA . 1,702 parts In-Stock

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$44.035

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1,702

$44.035

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Corphita

USA . 4,105 parts In-Stock

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4,105

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Parana Technologies

USA . 223 parts In-Stock

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$27.999

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223

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$27.999

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Overview

Unlock high-performance with the 74LX1G05STR from STMicroelectronics, a leader in innovative logic gate solutions. Designed for durability and precision, this compact gem offers rapid propagation delay and low power consumption, making it perfect for demanding applications in automotive and industrial sectors. Enhance your designs with reliability and efficiency, ensuring your projects reach their full potential while benefiting from ST's renowned quality and support.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protects the internal components from environmental factors.

Propagation Delay At Nominal Supply: 4.2 ns

A low propagation delay enhances the speed of signal processing, making it suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for better space utilization on PCBs, contributing to compact circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape is advantageous for space efficiency and optimal layout on circuit boards.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low nominal supply voltage helps in energy conservation and makes it compatible with low-power applications.

Load Capacitance (CL): 50 pF

A manageable load capacitance allows for compatibility with a variety of signal types and helps in maintaining signal integrity.

Power Supplies (V): 3.3 V

Support for a common power supply voltage of 3.3 V simplifies integration into existing systems.

No. of Terminals: 5

With 5 terminals, this logic gate can perform multiple functions while maintaining a compact design.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The small outline and low profile design allow for high-density assembly, making it ideal for modern electronic devices.

Maximum I (ol): 24 Amp

Capability of handling a high output low current makes it suitable for driving various other components in a circuit.

Propagation Delay (tpd): 8.3 ns

This propagation delay ensures quick response times in electronic circuits, enhancing overall performance.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature indicates the product's robustness in demanding environments.

Output Characteristics: OPEN-DRAIN

Open-drain output enables easy interfacing with various logic levels, providing flexibility in circuit designs.

Minimum Operating Temperature: -55 °C

A wide operating temperature range makes it suitable for use in extreme conditions, including military and aerospace applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures reliable connections over time.

Terminal Position: DUAL

Dual terminal positioning allows for versatile circuit configurations and easier integration into layouts.

Maximum Seated Height: 1.45 mm

A compact seated height is essential for low-profile designs, making it a choice for space-constrained applications.

Width: 1.625 mm

A narrow width enhances the ability to fit into tight spaces on circuit boards.

Minimum Supply Voltage (Vsup): 1.65 V

With a low minimum supply voltage, it is energy-efficient and ideal for battery-operated devices.

Length: 2.9 mm

The compact length aids in high-density designs, allowing multiple components to be placed closely together.

Temperature Grade: MILITARY

Having a military temperature grade indicates high reliability and performance under rigorous conditions.

Technology: CMOS

CMOS technology enables low power consumption and high noise immunity, making it suitable for a broad range of applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and rework, streamlining assembly processes.

Packing Method: TR

Tape and reel packing method provides efficient handling during machine assembly processes.

Terminal Pitch: 0.95 mm

A standard terminal pitch allows for compatibility with a wide range of PCBs and assembly techniques.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V provides flexibility for various circuit configurations and applications.

Technical Specifications

Logic Gates 74LX1G05STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

TTL/H/L

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.2 ns

Propagation Delay (tpd):

8.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.625 mm

Trade Compliance

74LX1G05STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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