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74LX1G132CTR

STMicroelectronics

74LX1G132CTR by STMicroelectronics

74LX1G132CTR by STMicroelectronics is a CMOS Schmitt Trigger logic gate with a fast propagation delay of 5.5 ns and operates at supply voltages from 1.65V to 5.5V. It features dual inputs and is ideal for high-speed applications in compact designs. Its small outline package ensures efficient space utilization in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,727 parts In-Stock

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4,727

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Vyrian

USA . 4,724 parts In-Stock

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4,724

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ComSIT Distribution GmbH

Germany . 2,940 parts In-Stock

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2,940

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Anansix

USA . 495 parts In-Stock

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495

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Native Components

USA . 493 parts In-Stock

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$0.180

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-

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$0.173

493

$0.180

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$0.173

Northwest PG Solutions

USA . 1,535 parts In-Stock

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$0.198

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$0.175

1,535

$0.198

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$0.175

Microchip USA

USA . 185 parts In-Stock

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$0.451

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185

$0.451

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IDEA Electronic Components Group

UK . 258 parts In-Stock

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$15.718

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$14.146

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258

$15.718

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$14.146

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AZTECH Wire

Italy . 346 parts In-Stock

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$20.770

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346

$20.770

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MKK Technologies

India . 1,861 parts In-Stock

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$29.557

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$29.557

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DigiPath Technology Company

USA . 1,861 parts In-Stock

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$29.557

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$29.557

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Ampacity Inc.

Singapore . 131 parts In-Stock

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$53.000

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Corphita

USA . 2,359 parts In-Stock

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2,359

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Parana Technologies

USA . 1,856 parts In-Stock

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$18.794

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$18.794

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Overview

Elevate your designs with the 74LX1G132CTR from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance logic gate delivers rapid response in a compact package, ideal for space-constrained applications. With its robust temperature range and low power consumption, it ensures reliability in critical environments. Trust STMicroelectronics for quality and performance that empower your projects to achieve greater efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliable performance in various environments.

Propagation Delay At Nominal Supply: 5.5 ns

Fast propagation delay enables high-speed switching applications, improving circuit efficiency.

Surface Mount: YES

Surface mount technology facilitates compact designs, allowing for space-saving PCB layouts.

No. of Inputs: 2

Dual input capability provides flexibility for a variety of logic operations.

Package Shape: RECTANGULAR

Rectangular form factor enhances layout versatility and efficient use of board space.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage makes it suitable for power-sensitive applications.

Load Capacitance (CL): 50 pF

Low load capacitance allows for faster operation and reduced power consumption.

Power Supplies (V): 3.3

Compatible with common digital logic levels, ensuring wide usability in modern designs.

No. of Terminals: 5

Compact terminal design enables easy integration into tight spaces on the circuit board.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Thin profile design supports modern, high-density applications while maintaining a small footprint.

Maximum I (ol): 24 Amp

High output current capacity allows it to drive significant loads directly, enhancing its utility.

Propagation Delay (tpd): 12 ns

Moderate propagation delay suitable for a wide range of applications, balancing speed and power.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliability in demanding environments.

Minimum Operating Temperature: -55 °C

Wide temperature range makes it reliable for various applications including extreme conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish enhances solderability, ensuring robust connections in assemblies.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and flexibility in PCB design.

Maximum Seated Height: 1.1 mm

Low seated height is beneficial for thin devices and minimizing overall profile.

Width: 1.25 mm

Compact width supports high-density layouts and other space-constrained designs.

Minimum Supply Voltage (Vsup): 1.65 V

Low minimum supply voltage allows for operation in low-power applications, enhancing energy efficiency.

Maximum Time At Peak Reflow Temperature (s): 30

Generous reflow time contributes to successful soldering processes without damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature compatibility supports advanced soldering technologies.

Length: 2 mm

Compact length is ideal for space-sensitive applications and modern electronic designs.

Temperature Grade: MILITARY

Military temperature grading ensures high reliability and performance in demanding applications.

Schmitt Trigger: YES

Incorporation of Schmitt trigger provides enhanced noise immunity and sharp signal transitions.

Technology: CMOS

CMOS technology contributes to low power consumption and high-speed performance, making it suitable for various digital logic applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and improve mechanical strength of the connections.

Packing Method: TR

Taped and reeled packing method allows for automated assembly and efficient handling.

Terminal Pitch: 0.65 mm

Fine terminal pitch allows for greater circuit density and miniaturization of electronic designs.

Maximum Supply Voltage (Vsup): 5.5 V

Compatible with various supply voltages, offering versatility for different application requirements.

Technical Specifications

Logic Gates 74LX1G132CTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

TTL/H/L

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

74LX1G132CTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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