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74LX1G70CTR

STMicroelectronics

74LX1G70CTR by STMicroelectronics

74LX1G70CTR by STMicroelectronics is a CMOS logic gate with a propagation delay of just 4.2 ns, operating b/w 1.65V and 5.5V. It features a compact SOIC package and supports applications in military-grade electronics due to its wide temp range (-55 °C to 125°C). With a load capacitance of 50 pF, it's ideal for high-speed circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,315 parts In-Stock

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Anansix

USA . 1,386 parts In-Stock

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Digiode

USA . 797 parts In-Stock

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Native Components

USA . 323 parts In-Stock

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$0.213

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$0.204

323

$0.213

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Northwest PG Solutions

USA . 721 parts In-Stock

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$0.234

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$0.206

721

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$0.206

Microchip USA

USA . 278 parts In-Stock

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$4.860

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$4.860

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IDEA Electronic Components Group

UK . 398 parts In-Stock

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$8.578

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$7.720

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398

$8.578

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$7.720

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AZTECH Wire

Italy . 1,023 parts In-Stock

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$12.700

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$12.700

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MKK Technologies

India . 1,301 parts In-Stock

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$16.131

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$16.131

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DigiPath Technology Company

USA . 1,301 parts In-Stock

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$16.131

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$16.131

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Authorized Procurement Solutions

USA . 32,000 parts In-Stock

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Perfect Parts

USA . 4,254 parts In-Stock

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Corphita

USA . 2,499 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,899 parts In-Stock

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Parana Technologies

USA . 1,288 parts In-Stock

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$10.256

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$10.256

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Overview

Unlock unparalleled performance with the 74LX1G70CTR from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This compact logic gate delivers rapid response times and exceptional reliability, perfect for applications ranging from consumer electronics to military systems. With its low power consumption and robust design, experience seamless integration and enhanced efficiency, ensuring your projects stand out and thrive in today's competitive landscape.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures robustness and longevity in various applications.

Propagation Delay At Nominal Supply: 4.2 ns

A low propagation delay improves signal integrity and allows for faster data transmission.

Surface Mount: YES

Surface mount technology facilitates easy integration into modern electronic designs, enabling reduced assembly space.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout and placement on printed circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage ensures energy efficiency and compatibility with low-power applications.

Load Capacitance (CL): 50 pF

A low load capacitance supports faster switching speeds, making it suitable for high-frequency applications.

Power Supplies (V): 3.3

Compatibility with 3.3V power supplies aligns with standard digital circuits, ensuring widespread applicability.

No. of Terminals: 5

A 5-terminal configuration allows for versatile connections in compact designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and compact design are advantageous for space-constrained applications.

Maximum I (ol): 24 Amp

A high output current capability indicates strong performance under load conditions.

Propagation Delay (tpd): 12 ns

With a relatively low propagation delay, this logic gate ensures timely signal response in digital circuits.

Maximum Operating Temperature: 125 °C

A high operating temperature rating allows this product to function reliably in demanding environments.

Minimum Operating Temperature: -55 °C

Capability to operate at low temperatures makes it suitable for extreme application conditions.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and long-term reliability of connections.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in circuit design and layout.

Maximum Seated Height: 1.1 mm

Low seated height supports the creation of slimmer devices and enhances design versatility.

Width: 1.25 mm

A narrow width allows for high-density mounting in compact electronic designs.

Minimum Supply Voltage (Vsup): 1.65 V

Lower minimum supply voltage enhances compatibility with a variety of systems and reduces power consumption.

Length: 2 mm

A short length contributes to space efficiency on PCB layouts.

Temperature Grade: MILITARY

MILITARY-grade components are built to withstand harsh conditions, making this product highly reliable.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for diverse applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and ease of soldering.

Packing Method: TR

Taping and Reel (TR) packing method ensures efficient handling and automated assembly.

Terminal Pitch: 0.65 mm

A compact terminal pitch allows for higher packing density, making it suitable for compact applications.

Maximum Supply Voltage (Vsup): 5.5 V

A wide maximum supply voltage range provides versatility across multiple applications.

Technical Specifications

Logic Gates 74LX1G70CTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

TTL/H/L

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.2 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74LX1G70CTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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