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NOIP1SN012KA-GTI

Onsemi

NOIP1SN012KA-GTI by Onsemi

NOIP1SN012KA-GTI by Onsemi is a CMOS image sensor with 4.5x4.5 um pixel size, offering 4096x3072 resolution and 59 dB dynamic range. It operates at 1.7-1.9 V, has a master clock of 360 MHz, and supports a frame rate of 160 fps. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

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Vyrian

USA . 5,114 parts In-Stock

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Digiode

USA . 1,149 parts In-Stock

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AZTECH Wire

Italy . 256 parts In-Stock

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Kulean Microsystems

USA . 6,368 parts In-Stock

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TANS Electronics

Latvia . 3,730 parts In-Stock

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Problanco Electronics

Mexico . 2,611 parts In-Stock

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UHIMA Technologies

Türkiye . 962 parts In-Stock

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SupplyDigital Components

Austria . 864 parts In-Stock

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Corohmni

South Africa . 294 parts In-Stock

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Corphita

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Overview

Experience high-quality imaging like never before with the NOIP1SN012KA-GTI by Onsemi. As a leading manufacturer in the industry, Onsemi has crafted this cutting-edge image sensor to deliver unparalleled performance and reliability. Ideal for a wide range of applications, this sensor offers exceptional value by providing crisp and clear images with a dynamic range of 59 dB. Elevate your projects with the NOIP1SN012KA-GTI and experience the advantages of superior imaging technology.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.9 V

Operating at a maximum voltage of 1.9V ensures low power consumption and reduced heat generation.

Master Clock: 360 MHz

A high master clock speed of 360 MHz enables fast image processing and data transfer.

Body Width: 36.1 inch

The compact body width of 36.1 inches makes this image sensor suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Utilizing CMOS technology for the image sensor ensures high sensitivity and low noise performance.

Body Height: 3.5 mm

The slim body height of 3.5 mm enables the image sensor to be easily incorporated into slim designs.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for efficient placement and alignment within electronic systems.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage of 1.7V further contributes to the energy efficiency of the image sensor.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this image sensor can be used in a wide range of environments.

Horizontal Pixel: 4096

The high horizontal pixel count of 4096 results in sharp and detailed images with rich color reproduction.

Minimum Operating Temperature: -40 °C

Capable of operating at a minimum temperature of -40 °C, this image sensor is suitable for use in extreme cold conditions.

Dynamic Range: 59 dB

The high dynamic range of 59 dB allows the image sensor to capture a wide range of light intensities, from shadows to highlights.

Vertical Pixel: 3072

The vertical pixel count of 3072 contributes to the overall high resolution and image quality of this sensor.

Body Length/Diameter: 43.1 mm

The body length of 43.1 mm provides a good balance between compact size and functionality for easy integration.

Optical Format (inch): 4/3

The 4/3 optical format allows for compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

The solder termination type ensures a secure and reliable connection for stable performance.

Output Interface Type: 4-WIRE INTERFACE

The 4-wire interface type enables fast and efficient data communication for seamless integration with other devices.

Frame Rate: 160 fps

With a high frame rate of 160 fps, this image sensor is capable of capturing fast-moving subjects with smooth motion.

Array Type: FRAME

The frame array type allows for organized and systematic image capture for improved image quality and processing.

Sensitivity (V/lx.s): 5.8 V/lx.s

The high sensitivity of 5.8 V/lx.s ensures that the image sensor can capture clear and bright images even in low light conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to securely attach the image sensor to PCBs or other surfaces for stable operation.

Technical Specifications

Image Sensors NOIP1SN012KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

160 fps

Horizontal Pixel:

4096

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

4/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

3072

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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