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NOIP1FN0500A-QDI

Onsemi

NOIP1FN0500A-QDI by Onsemi

NOIP1FN0500A-QDI by Onsemi is an image sensor with 800x600 resolution, 4.8um pixel size, and 60dB dynamic range. It operates at 1.7-1.9V, has a max clock of 72MHz, and output digital voltage signals. Ideal for high-speed imaging applications requiring precise digital output in a compact square package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,291 parts In-Stock

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Digiode

USA . 1,505 parts In-Stock

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1,505

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AZTECH Wire

Italy . 1,180 parts In-Stock

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$9.550

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$9.550

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Problanco Electronics

Mexico . 5,952 parts In-Stock

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SupplyDigital Components

Austria . 3,327 parts In-Stock

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Corphita

USA . 2,307 parts In-Stock

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Kulean Microsystems

USA . 1,865 parts In-Stock

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TANS Electronics

Latvia . 1,861 parts In-Stock

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UHIMA Technologies

Türkiye . 395 parts In-Stock

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Corohmni

South Africa . 270 parts In-Stock

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Overview

Enhance your imaging solutions with the NOIP1FN0500A-QDI by Onsemi, a cutting-edge image sensor that delivers unparalleled quality and performance. Onsemi is a trusted manufacturer known for its innovative technology and reliable products. This sensor is ideal for a wide range of applications, providing crisp and detailed images with a dynamic range of 60 dB. With a maximum operating temperature of 85 °C and a frame rate of 545 fps, this sensor offers exceptional value and benefits to customers seeking top-notch image capture capabilities. Elevate your imaging experience with the NOIP1FN0500A-QDI by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Small pixel size allows for high resolution imaging.

Maximum Supply Voltage: 1.9 V

Low power consumption with a reasonable voltage requirement.

Master Clock: 72 MHz

High clock speed enables fast data processing.

Body Width: 14.22 inch

Compact size for easy integration into different systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high sensitivity and low noise.

Body Height: 2.28 mm

Slim design suitable for applications with space constraints.

Package Shape or Style: SQUARE

Square package provides a balanced layout for efficient PCB design.

Minimum Supply Voltage: 1.7 V

Wide voltage range allows for flexibility in power supply design.

Maximum Operating Temperature: 85 °C

High operating temperature range for versatile use in different environments.

Horizontal Pixel: 800

High pixel count for detailed image capture.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and interfacing.

Minimum Operating Temperature: -40 °C

Wide operating temperature range for reliable performance in extreme conditions.

Maximum Operating Current: 80 mA

Low operating current for energy efficiency.

Dynamic Range: 60 dB

Wide dynamic range for capturing both bright and dark areas in an image.

Vertical Pixel: 600

Balanced pixel count for horizontal and vertical resolution.

Body Length/Diameter: 14.22 mm

Compact form factor for easy installation and integration.

Spectral Response (nm): 400-1000

Broad spectral response for capturing a wide range of colors.

Optical Format (inch): 1/3.6

Standard optical format for compatibility with various lenses.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Output Interface Type: 4-WIRE INTERFACE

Versatile interface for easy integration with different systems.

Frame Rate: 545 fps

High frame rate for smooth and detailed video capture.

Array Type: FRAME

Frame array design for efficient image processing and data handling.

Mounting Feature: SURFACE MOUNT

Surface mount installation for easy and secure mounting on PCBs.

Technical Specifications

Image Sensors NOIP1FN0500A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.2 TO 3.4 V SUPPLY VOLTAGE, GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

60 dB

Frame Rate:

545 fps

Horizontal Pixel:

800

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3.6

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

600

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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