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NOIP1FN016KA-GDI

Onsemi

NOIP1FN016KA-GDI by Onsemi

NOIP1FN016KA-GDI by Onsemi is a CMOS image sensor with 4.5X4.5 um pixel size, 360 MHz master clock, and 4096x4096 resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for high-speed imaging applications requiring precise detail capture at fast frame rates up to 120 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,420 parts In-Stock

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Digiode

USA . 1,788 parts In-Stock

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AZTECH Wire

Italy . 970 parts In-Stock

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$19.990

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SupplyDigital Components

Austria . 5,166 parts In-Stock

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Kulean Microsystems

USA . 4,121 parts In-Stock

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TANS Electronics

Latvia . 1,970 parts In-Stock

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Problanco Electronics

Mexico . 1,209 parts In-Stock

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UHIMA Technologies

Türkiye . 958 parts In-Stock

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Corohmni

South Africa . 277 parts In-Stock

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Corphita

USA . 268 parts In-Stock

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Overview

Capture the world in stunning detail with the NOIP1FN016KA-GDI by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch quality and reliability in every product. Designed for a wide range of applications, this image sensor offers unparalleled value with its high sensitivity, impressive dynamic range, and fast frame rate. Whether you're capturing breathtaking landscapes or intricate details, this sensor provides the perfect solution for all your imaging needs. Choose Onsemi for exceptional performance and superior results every time.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

This small pixel size allows for high resolution imaging and detailed captures.

Maximum Supply Voltage: 1.9 V

Provides flexibility in power supply options and ensures safe operation within specified limits.

Master Clock: 360 MHz

High master clock frequency allows for fast data processing and high-speed image capture.

Body Width: 36.1 inch

Compact body width makes it easy to integrate this image sensor into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide low power consumption, high sensitivity, and excellent image quality.

Body Height: 3.5 mm

Low profile design makes it suitable for applications where space is limited.

Package Shape or Style: RECTANGULAR

Standard rectangular package shape for easy handling and integration.

Minimum Supply Voltage: 1.7 V

Allows for operation at lower power supply voltage, increasing energy efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures versatility in different environmental conditions.

Horizontal Pixel: 4096

High horizontal pixel count enables high-resolution imaging and precision.

Minimum Operating Temperature: -40 °C

Handles low temperature operation, making it suitable for various outdoor and industrial applications.

Dynamic Range: 59 dB

Wide dynamic range allows for capturing both bright and dark areas with good detail and clarity.

Vertical Pixel: 4096

High vertical pixel count contributes to overall image sharpness and detail.

Body Length/Diameter: 43.1 mm

Compact body length ensures space-efficient integration and installation.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for efficient data transfer and communication with external devices.

Frame Rate: 120 fps

High frame rate allows for smooth and real-time image capturing and video recording.

Array Type: FRAME

Frame array type for organized and structured image capture.

Sensitivity (V/lx.s): 5.8 V/lx.s

High sensitivity results in clear and detailed image quality even in low-light conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature for secure and stable installation onto circuit boards or surfaces.

Technical Specifications

Image Sensors NOIP1FN016KA-GDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

120 fps

Horizontal Pixel:

4096

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

4096

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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