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NLX2G14AMUTCG

Onsemi

NLX2G14AMUTCG by Onsemi

NLX2G14AMUTCG by Onsemi is a CMOS Logic Gate with 2 functions, 9.1ns propagation delay at 2.3V supply voltage. It has a MILITARY temperature grade and operates b/w -55 to 125 °C. Ideal for applications requiring Schmitt Trigger functionality in compact designs.

Median Price

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Lifecycle Status

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3

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1k+

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AZTECH Wire

Italy . 1,166 parts In-Stock

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RC Electronics

USA . 65,909 parts In-Stock

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TANS Electronics

Latvia . 6,454 parts In-Stock

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SupplyDigital Components

Austria . 5,500 parts In-Stock

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India . 3,013 parts In-Stock

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Overview

Discover the cutting-edge NLX2G14AMUTCG logic gates by Onsemi, a leading manufacturer known for top-quality components. Ideal for various applications, these logic gates offer fast propagation delay and low power consumption, making them perfect for high-performance circuits. With a MILITARY-grade temperature range and dual terminal position, this product ensures reliability in any environment. Experience seamless integration with its small outline package and surface mount design. Upgrade your electronic projects with the NLX2G14AMUTCG and unlock unparalleled efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 9.1 ns

A low propagation delay ensures fast response times for signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and simplifying the manufacturing process.

No. of Functions: 2

Having multiple functions in one device adds versatility and efficiency to the circuit design.

Nominal Supply Voltage / Vsup (V): 2.3

The 2.3V supply voltage is within a common operating range for many electronic devices, making integration easier.

Load Capacitance (CL): 15 pF

The low load capacitance minimizes signal distortion and ensures accurate signal transmission.

Power Supplies (V): 1.8/5

Support for multiple power supply options allows for flexibility in different system configurations.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without performance degradation.

Schmitt Trigger: YES

The Schmitt trigger feature helps eliminate noise and ensures a clean signal transition, improving overall system reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for battery-powered devices and noise-sensitive applications.

Technical Specifications

Logic Gates NLX2G14AMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

9.1 ns

Propagation Delay (tpd):

9.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLX2G14AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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