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SN74LVC1G14DCK

Texas Instruments

SN74LVC1G14DCK by Texas Instruments

SN74LVC1G14DCK by Texas Instruments is a CMOS logic gate with 5 terminals and a supply voltage range of 1.65V to 5.5V. It has a propagation delay of 11ns, making it suitable for industrial applications requiring fast signal processing in temperatures ranging from -40°C to 85°C. This surface-mount package measures 2mm x 1.25mm x 1.1mm, ideal for compact electronic designs.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Chip Stock

USA . 933,510 parts In-Stock

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Digiode

USA . 4,303 parts In-Stock

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Vyrian

USA . 4,168 parts In-Stock

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Nova Conductors

Japan . 52 parts In-Stock

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Speed Components Ltd

Israel . 37 parts In-Stock

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LWI Electronics Inc

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Mil-Aero Solutions, Inc.

USA . 9 parts In-Stock

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Parana Technologies

USA . 1,002 parts In-Stock

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$10.789

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$11.272

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$10.789

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ChromeModa Solutions

Germany . 1,638 parts In-Stock

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$12.123

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$9.941

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$12.123

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IDEA Electronic Components Group

UK . 1,349 parts In-Stock

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$12.123

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$10.911

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AZTECH Wire

Italy . 235 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Corohmni

South Africa . 214 parts In-Stock

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One Stop Electronics

USA . 1,350 parts In-Stock

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Ampacity Inc.

Singapore . 518 parts In-Stock

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Semicontronic

India . 308 parts In-Stock

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Continental Prestige Electronics

USA . 6,316 parts In-Stock

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Argo Parts USA

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ChipstoGo Electronic ltd

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A-Z Elektronik GmbH

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DigiPath Technology Company

USA . 1,461 parts In-Stock

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Corphita

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Bastille Electronics

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Kepictronics

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Overview

Unlock the power of advanced logic gates with the SN74LVC1G14DCK by Texas Instruments. Crafted with precision and expertise, this small outline, thin profile package offers fast propagation delay, wide temperature range, and low supply voltage for industrial-grade applications. Ideal for a variety of electronic devices, this CMOS technology-based component ensures reliable performance and efficient operation. Elevate your designs with the quality and reliability of Texas Instruments, making the SN74LVC1G14DCK the smart choice for all your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product durable and resistant to environmental factors, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage requirement of 1.8V helps in reducing power consumption and can be suitable for battery-operated devices.

Propagation Delay (tpd): 11 ns

The fast propagation delay of 11ns ensures quick signal processing and high-speed performance in logic operations.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the product can operate reliably in various industrial environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in digital circuits.

Technical Specifications

Logic Gates SN74LVC1G14DCK attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

Length:

2 mm

Logic IC Type:

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Propagation Delay (tpd):

11 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G14DCK Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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