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NLX2G02EMUTCG

Onsemi

NLX2G02EMUTCG by Onsemi

NLX2G02EMUTCG by Onsemi is a Logic Gates IC with 9.5ns Propagation Delay, 2 Functions, and 2 Inputs. It operates at 1.8/5V with load capacitance of 15pF. Ideal for military applications due to its CMOS technology and wide temperature range from -55 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,426 parts In-Stock

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Vyrian

USA . 947 parts In-Stock

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TANS Electronics

Latvia . 5,832 parts In-Stock

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Problanco Electronics

Mexico . 3,979 parts In-Stock

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SupplyDigital Components

Austria . 2,087 parts In-Stock

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Corohmni

South Africa . 457 parts In-Stock

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Kulean Microsystems

USA . 418 parts In-Stock

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UHIMA Technologies

Türkiye . 280 parts In-Stock

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Corphita

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Overview

Discover the NLX2G02EMUTCG by Onsemi, a top-quality logic gate offering unparalleled performance and reliability. With a focus on innovation and precision engineering, Onsemi delivers cutting-edge solutions for a wide range of applications. This versatile product boasts a compact design, low power consumption, and fast propagation delay, making it ideal for demanding tasks. Experience the value and benefits of Onsemi's NLX2G02EMUTCG and elevate your projects to new heights of efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making it a good choice for a logic gate that may be used in various electronic devices.

Propagation Delay At Nominal Supply: 9.5 ns

With a low propagation delay, this logic gate can quickly respond to input signals, allowing for fast data processing in electronic circuits.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V, this logic gate is compatible with standard electronic systems and can easily integrate into existing circuits.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate efficient and reliable for various applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions, ensuring reliable performance in diverse settings.

Technical Specifications

Logic Gates NLX2G02EMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N8

Length:

1.6 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

9.5 ns

Propagation Delay (tpd):

9.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX2G02EMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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