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SN74LVC1G17YZVR

Texas Instruments

SN74LVC1G17YZVR by Texas Instruments

SN74LVC1G17YZVR by Texas Instruments is a CMOS logic gate with 5.5 ns propagation delay and 3.3V nominal voltage, suitable for industrial applications. It features Schmitt Trigger technology, operates b/w -40 to 85 °C, and has a max power supply current of 0.01 mA. The package style is grid array with very thin profile and fine pitch, making it ideal for surface mount applications.

Median Price

$0.218

Lifecycle Status

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16

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Chip1Stop

Japan . 1 parts In-Stock

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Arrow

USA . 576 parts In-Stock

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Texas Instruments

USA . 5,981,816 parts In-Stock

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Mouser Electronics

USA . 1,678 parts In-Stock

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Rochester

USA . 269,216 parts In-Stock

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DigiKey

USA . 269,216 parts In-Stock

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Verical

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Digiode

USA . 3,134 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Component Electronics Inc.

Canada . 755 parts In-Stock

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$0.380

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$0.290

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Vyrian

USA . 932,256 parts In-Stock

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Prism Electronics

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Mil-Aero Solutions, Inc.

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Cyclops Electronics Ltd

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Semi Source

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SPM Sales

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Semicontronic

India . 970,679 parts In-Stock

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$0.092

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Ampacity Inc.

Singapore . 970,314 parts In-Stock

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Corphita

USA . 2,368 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

USA . 1,275 parts In-Stock

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Corohmni

South Africa . 75 parts In-Stock

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Microchip USA

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Parana Technologies

USA . 673 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 1,787 parts In-Stock

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IDEA Electronic Components Group

UK . 977 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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Overview

Enhance the efficiency of your electronic projects with the Texas Instruments SN74LVC1G17YZVR Logic Gates. Crafted with precision and expertise, this product offers a fast propagation delay of 5.5 ns and a low power supply current of just 0.01 mA, making it ideal for a wide range of applications. Whether you're working on consumer electronics or industrial machinery, this logic gate ensures reliable performance and seamless integration. Trust Texas Instruments for quality components that deliver exceptional value and unbeatable advantages to meet all your design needs. Elevate your projects with the SN74LVC1G17YZVR today!

Feature Benefit Bullets

Propagation Delay At Nominal Supply

Low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount

Surface mount technology allows for easy and compact installation on PCBs, saving space and facilitating automated assembly processes.

Nominal Supply Voltage / Vsup (V)

Operating at a common supply voltage of 3.3V makes it compatible with a wide range of digital systems and components.

Load Capacitance (CL)

The low load capacitance helps in maintaining signal integrity and reducing signal distortion in high-frequency applications.

Maximum I (ol)

High maximum output current capability allows for driving heavy loads without compromising performance.

Schmitt Trigger

Incorporating a Schmitt trigger feature ensures better noise immunity and hysteresis, making the logic gate more reliable in noisy environments.

Minimum Supply Voltage (Vsup)

The ability to operate at a low minimum supply voltage makes this logic gate energy-efficient and suitable for battery-operated devices.

Maximum Operating Temperature

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions and extended operation without performance degradation.

Technical Specifications

Logic Gates SN74LVC1G17YZVR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-XBGA-B4

JESD-609 Code:

e1

Length:

.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

BGA4,2X2,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

11 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.5 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

.9 mm

Trade Compliance

SN74LVC1G17YZVR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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