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SN74LVC1G00DBVR

Texas Instruments

SN74LVC1G00DBVR by Texas Instruments

SN74LVC1G00DBVR by Texas Instruments is a CMOS logic gate with 2 inputs, 4.7 ns propagation delay, and 3.3V nominal voltage. It is ideal for automotive applications due to its low profile package style, small size, and dual terminal position. With a max operating temperature of 125°C and surface mount capability, it offers reliable performance in various environments.

Median Price

$0.063

Lifecycle Status

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1k+

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Texas Instruments

USA . 952,033 parts In-Stock

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Arrow

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UK . 3,275 parts In-Stock

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Verical

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Element14

Singapore . 95 parts In-Stock

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Farnell

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Freelance Electronics

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Flip Electronics

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Ozdisan Elektronik

Türkiye . 7,664 parts In-Stock

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Digiode

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Nova Conductors

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TME

Poland . 64 parts In-Stock

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Component Electronics Inc.

Canada . 5,975 parts In-Stock

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NAC Semi

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PC Components Company LLC

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First Choice Components Inc.

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Semicontronic

India . 121,035 parts In-Stock

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Ampacity Inc.

Singapore . 117,695 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Microchip USA

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Parana Technologies

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DigiPath Technology Company

USA . 822 parts In-Stock

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$13.613

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$12.524

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ChromeModa Solutions

Germany . 5,529 parts In-Stock

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$13.891

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$11.391

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IDEA Electronic Components Group

UK . 1,218 parts In-Stock

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$12.502

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$18.929

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Corohmni

South Africa . 179 parts In-Stock

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GreenTree Electronics

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A-Z Elektronik GmbH

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Infinite Electronics LLP (Excess)

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Brazil . 439 parts In-Stock

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Lucentia Tech

USA . 439 parts In-Stock

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Israel . 80 parts In-Stock

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Overview

Enhance your electronic projects with the SN74LVC1G00DBVR logic gate by Texas Instruments, a trusted manufacturer known for top-notch quality and reliability. This versatile component is perfect for a wide range of applications in the electronics industry. With its fast propagation delay, low power consumption, and wide operating temperature range, this logic gate offers exceptional value and performance. Upgrade your projects today with the SN74LVC1G00DBVR and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and reliability for long-term use.

Propagation Delay At Nominal Supply:

4.7 ns - Offers fast signal processing for time-sensitive applications.

Surface Mount:

YES - Enables easy installation and efficient use of space on circuit boards.

No. of Inputs:

2 - Allows for versatile connection options and logic operations.

Package Shape:

RECTANGULAR - Fits well in compact designs and allows for efficient circuit layout.

Nominal Supply Voltage / Vsup (V):

3.3 - Compatible with common supply voltages for widespread use.

Load Capacitance (CL):

50 pF - Provides stability and efficient performance in various load conditions.

Power Supplies (V):

3.3 - Ensures consistent power delivery for reliable operation.

No. of Terminals:

5 - Enables easy connections and integration into existing systems.

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH - Ideal for space-constrained applications and compact designs.

Maximum I (ol):

32 Amp - Capable of handling high current loads for robust performance.

Propagation Delay (tpd):

9 ns - Offers fast response times for time-critical operations.

Maximum Operating Temperature:

125 °C - Suitable for use in high-temperature environments such as automotive applications.

Minimum Operating Temperature:

40 °C - Can operate effectively in extreme cold conditions.

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au) - Provides reliable connections and corrosion resistance.

Terminal Position:

DUAL - Allows for versatile mounting options and easy integration into different systems.

Maximum Seated Height:

1.45 mm - Suitable for low-profile designs and space-saving applications.

Width:

1.6 mm - Compact size for efficient use of board space.

Minimum Supply Voltage (Vsup):

1.65 V - Low power consumption and operation at lower voltages.

Maximum Time At Peak Reflow Temperature (s):

30 - Resistant to high-temperature soldering processes for reliable assembly.

Peak Reflow Temperature °C:

260 - Withstands high-temperature manufacturing processes.

Length:

2.9 mm - Compact size for easy integration into various systems.

Temperature Grade:

AUTOMOTIVE - Designed to meet automotive industry standards for reliability and performance.

Technology:

CMOS - Offers low power consumption and high noise immunity for efficient operation.

Terminal Form:

GULL WING - Provides secure and reliable connections in surface-mount applications.

Packing Method:

TR - Convenient packaging for easy handling and storage.

Terminal Pitch:

0.95 mm - Allows for precise connections and compact design layouts.

Maximum Supply Voltage (Vsup):

5.5 V - Can operate safely at higher supply voltages for flexibility in use.

Maximum Power Supply Current (ICC):

0.01 mA - Low power consumption for energy efficiency.

Technical Specifications

Logic Gates SN74LVC1G00DBVR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.7 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

SN74LVC1G00DBVR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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