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SN74LVC1G332DCKR

Texas Instruments

SN74LVC1G332DCKR by Texas Instruments

SN74LVC1G332DCKR by Texas Instruments is a CMOS Logic Gate with 3 inputs, 20ns propagation delay, and 32A max I (ol). It operates at a supply voltage of 1.8V to 5.5V, making it ideal for automotive applications due to its small size and low power consumption. This surface-mount device in a rectangular package is designed for high-speed signal processing with a wide temperature range from -40°C to 125°C.

Median Price

$0.108

Lifecycle Status

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26

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1k+

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Arrow

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Texas Instruments

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DigiKey

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Chip1Stop

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Verical

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Rochester

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Digiode

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Ozdisan Elektronik

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Nova Conductors

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Bristol Electronics

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Prism Electronics

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NAC Semi

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PC Components Company LLC

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Component Sense

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Ampacity Inc.

Singapore . 72,680 parts In-Stock

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Semicontronic

India . 70,727 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Argo Parts USA

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Aranea Global

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Parana Technologies

USA . 188 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 6,764 parts In-Stock

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IDEA Electronic Components Group

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Corohmni

South Africa . 143 parts In-Stock

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Advanced Electronics

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Perfect Parts

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GreenTree Electronics

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Akira Global LLC

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Overview

Elevate your projects with the SN74LVC1G332DCKR by Texas Instruments, a high-quality logic gate designed to enhance performance and efficiency. Manufactured by the reputable Texas Instruments, this versatile component offers a wide range of applications in various industries. With its compact design and impressive specifications, this product provides customers with exceptional value and benefits, making it a smart choice for any project requiring reliable logic gates. Experience the advantage of Texas Instruments technology and take your designs to the next level with the SN74LVC1G332DCKR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for a variety of environments.

Propagation Delay At Nominal Supply: 20 ns

Fast response time ensures efficient operation and quick signal processing.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and simplifying assembly.

No. of Inputs: 3

Offers versatility in processing multiple input signals, enhancing the product's functionality.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal supply voltage for efficient performance and energy savings.

Load Capacitance (CL): 50 pF

Capable of handling a moderate load capacitance, ensuring stability in signal transmission.

Power Supplies (V): 3.3

Compatible with a common power supply voltage, making integration into existing systems easier.

No. of Terminals: 6

Sufficient number of terminals for versatile connectivity and signal distribution.

Maximum I (ol): 32 Amp

High output current capacity allows for driving strong signals and maintaining signal integrity.

Output Characteristics: 3-STATE

3-state output allows for multiple logic levels, enhancing flexibility in signal processing.

Temperature Grade: AUTOMOTIVE

Designed to withstand automotive temperature conditions, ensuring reliability in vehicle applications.

Maximum Supply Voltage (Vsup): 5.5 V

Wide supply voltage range for compatibility with various power sources and system requirements.

Technical Specifications

Logic Gates SN74LVC1G332DCKR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

20 ns

Propagation Delay (tpd):

20 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

SN74LVC1G332DCKR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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