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SN74LVC1G00DCKR

Texas Instruments

SN74LVC1G00DCKR by Texas Instruments

SN74LVC1G00DCKR by Texas Instruments is a CMOS logic gate with 2 inputs, 4.7 ns propagation delay, and 3.3V nominal voltage. It is used in automotive applications due to its small size, low power consumption (0.01 mA), and wide operating temperature range (-40 to 125 °C).

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

52

In-Stock Inventory

1k+

Distributors (Authorized)

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Texas Instruments

USA . 482,589 parts In-Stock

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Mouser Electronics

USA . 2,680 parts In-Stock

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DigiKey

USA . 1,999 parts In-Stock

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Newark

USA . 400 parts In-Stock

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Arrow

USA . 5,662 parts In-Stock

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Chip1Stop

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Farnell

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Verical

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DF Sales Co.

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Digiode

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Nova Conductors

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Poland . 1,832 parts In-Stock

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Maritex

Poland . 5,812 parts In-Stock

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Component Electronics Inc.

Canada . 5,585 parts In-Stock

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Forefront Electronics and Design

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Ampacity Inc.

Singapore . 61,864 parts In-Stock

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Semicontronic

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Corphita

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Argo Parts USA

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Aranea Global

USA . 500 parts In-Stock

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Component Stockers USA

USA . 113,642 parts In-Stock

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Parana Technologies

USA . 1,248 parts In-Stock

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DigiPath Technology Company

USA . 1,631 parts In-Stock

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ChromeModa Solutions

Germany . 4,646 parts In-Stock

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IDEA Electronic Components Group

UK . 2,300 parts In-Stock

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Corohmni

South Africa . 44 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Perfect Parts

USA . 617,992 parts In-Stock

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Israel . 62,337 parts In-Stock

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S.R.D Solutions

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Allen Electronics Distributors

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USA . 500 parts In-Stock

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Overview

Discover the SN74LVC1G00DCKR by Texas Instruments, a high-quality logic gate designed for a wide range of applications. With a compact design and excellent performance, this product is perfect for automotive use and other demanding environments. Experience fast propagation delay and low power consumption, all while benefiting from Texas Instruments' reputation for reliability and innovation. Upgrade your projects with the SN74LVC1G00DCKR and unlock a world of possibilities!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for the product, making it suitable for various applications.

Propagation Delay At Nominal Supply: 4.7 ns

Fast propagation delay allows for quick signal transmission and processing, making this logic gate efficient.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards, saving space and simplifying assembly.

No. of Inputs: 2

Having 2 inputs provides flexibility and versatility in logic operations, allowing for more complex calculations and operations.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is common and widely available, ensuring compatibility with various systems and power sources.

Load Capacitance (CL): 50 pF

The low load capacitance of 50 pF reduces signal distortion and improves the overall performance of the logic gate.

Power Supplies (V): 3.3

Consistent power supply at 3.3V ensures stable operation and reliable performance of the logic gate.

No. of Terminals: 5

Having 5 terminals allows for easy connections and integration within electronic circuits, enhancing usability.

Maximum I (ol): 32 Amp

The high maximum output current of 32 Amps supports the handling of high power loads, making this logic gate suitable for various applications.

Propagation Delay (tpd): 9 ns

Although slightly higher than the nominal delay, the 9 ns propagation delay is still fast enough for efficient signal processing.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this logic gate can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The terminal finish of Nickel/Palladium/Gold provides good conductivity and corrosion resistance, enhancing the longevity of the product.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and connection options, accommodating different circuit board designs.

Maximum Seated Height: 1.1 mm

The low seated height of 1.1 mm allows for compact and slim designs, suitable for space-constrained applications.

Width: 1.25 mm

The narrow width of 1.25 mm contributes to space-saving integration on circuit boards and compact electronic devices.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage of 1.65V ensures compatibility with a wide range of power sources and energy-efficient operation.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C enables reliable soldering and assembly processes during manufacturing.

Length: 2 mm

The compact length of 2 mm contributes to the overall small form factor and space-efficient design of the logic gate.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures that the logic gate can withstand the temperature variations and demands of automotive applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast operation, making this logic gate suitable for a wide range of applications.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and assembly onto circuit boards, enhancing manufacturing efficiency.

Packing Method: TR

Tape and reel packing method ensures convenient handling, storage, and automated assembly of the logic gates in mass production.

Terminal Pitch: 0.65 mm

The terminal pitch of 0.65 mm allows for precise and compact placement of the terminals, enhancing overall connectivity and integration.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5V provides flexibility and compatibility with various power sources and voltage requirements.

Maximum Power Supply Current (ICC): 0.01 mA

The low maximum power supply current of 0.01 mA indicates energy efficiency and minimal power consumption, making this logic gate cost-effective.

Technical Specifications

Logic Gates SN74LVC1G00DCKR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.7 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G00DCKR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-618-8807, 5962016188807

NIIN

016188807

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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