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NLX2G00DMUTCG

Onsemi

NLX2G00DMUTCG by Onsemi

NLX2G00DMUTCG by Onsemi is a Logic Gates IC with 2 functions and inputs. It has a propagation delay of 11ns at 1.8V, suitable for military-grade applications due to its wide temperature range from -55 °C to 125°C. The small outline package with very thin profile makes it ideal for space-constrained designs requiring fast signal processing.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

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SupplyDigital Components

Austria . 6,247 parts In-Stock

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Kulean Microsystems

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Corphita

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TANS Electronics

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Corohmni

South Africa . 244 parts In-Stock

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UHIMA Technologies

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Problanco Electronics

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Overview

Experience the unmatched quality and reliability of Onsemi with the NLX2G00DMUTCG Logic Gates. This versatile component offers a compact design, fast propagation delay, and low power consumption, making it ideal for a wide range of applications. From consumer electronics to industrial automation, this product delivers exceptional performance and value, ensuring that your projects run smoothly and efficiently. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Propagation Delay At Nominal Supply: 11 ns

The low propagation delay at nominal supply ensures fast and efficient operation.

Surface Mount: YES

Being surface mountable makes the product easy to install and saves space on the circuit board.

No. of Functions: 2

Having 2 functions in one component increases efficiency and reduces the need for additional components.

No. of Inputs: 2

With 2 inputs, the product can handle multiple signals effectively.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V makes the product energy efficient and suitable for low power applications.

Load Capacitance (CL): 15 pF

The load capacitance of 15 pF ensures stable and reliable performance.

Power Supplies (V): 1.8/5

Supporting power supplies of 1.8V and 5V provides flexibility in operation.

No. of Terminals: 8

With 8 terminals, the product can easily interface with other components.

Maximum I (ol): 4 Amp

The high maximum output current of 4A allows the product to drive heavy loads.

Propagation Delay (tpd): 10.5 ns

Having a low propagation delay of 10.5 ns ensures fast signal processing.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures the product can withstand heat.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures the product can operate in a wide range of environments.

Terminal Position: DUAL

Having dual terminal positions allows for versatile installation options.

Maximum Seated Height: 0.55 mm

The low maximum seated height of 0.55 mm helps in compact designs.

Width: 1 mm

The small width of 1 mm saves space on the circuit board.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage of 1.65V ensures operation even in low voltage conditions.

Length: 1.95 mm

The small length of 1.95 mm helps in space-constrained designs.

Temperature Grade: MILITARY

Being military grade ensures high reliability and performance in harsh conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Terminal Form: NO LEAD

The no lead terminal form is environmentally friendly and eliminates the risk of lead contamination.

Packing Method: TR

The TR packing method is suitable for automated assembly processes.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5 mm enables high-density mounting.

Maximum Supply Voltage (Vsup): 5.5 V

Supporting a maximum supply voltage of 5.5V provides flexibility in operation.

Technical Specifications

Logic Gates NLX2G00DMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N8

Length:

1.95 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

10.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX2G00DMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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