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NLX2G04AMX1TCG

Onsemi

NLX2G04AMX1TCG by Onsemi

NLX2G04AMX1TCG by Onsemi is a Logic Gate with 8.4ns Propagation Delay, 15pF Load Capacitance, and 11ns Propagation Delay. Ideal for military applications due to its CMOS technology and wide operating temperature range of -55 °C to 125°C.

Median Price

$0.070

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,885 parts In-Stock

1+ parts

$0.070

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$0.070

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$0.070

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4,885

$0.070

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Distributors (In-Stock)

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Digiode

USA . 2,160 parts In-Stock

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$0.066

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2,160

$0.066

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Vyrian

USA . 8,074 parts In-Stock

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8,074

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Corphita

USA . 635 parts In-Stock

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$0.063

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635

$0.063

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Corohmni

South Africa . 308 parts In-Stock

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$0.070

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308

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Vigor

Singapore . 182 parts In-Stock

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$0.070

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AZTECH Wire

Italy . 342 parts In-Stock

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$19.700

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Component Stockers USA

USA . 279 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,873 parts In-Stock

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Kulean Microsystems

USA . 6,833 parts In-Stock

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Perfect Parts

USA . 5,970 parts In-Stock

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SupplyDigital Components

Austria . 3,709 parts In-Stock

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TANS Electronics

Latvia . 1,113 parts In-Stock

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Microchip USA

USA . 312 parts In-Stock

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UHIMA Technologies

Türkiye . 161 parts In-Stock

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Overview

Discover the power and efficiency of the NLX2G04AMX1TCG logic gates by Onsemi - a top-tier manufacturer renowned for quality and reliability. Ideal for a wide range of applications, this product offers lightning-fast propagation delay, low power consumption, and versatile voltage options. With a compact design and surface mount capabilities, it provides seamless integration into any project. Elevate your electronics with the cutting-edge technology of Onsemi and unlock endless possibilities.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 8.4 ns

Low propagation delay ensures fast response time which is essential for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs.

No. of Functions: 2

Having multiple functions in one package saves space on the PCB and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage minimizes power consumption and heat dissipation.

Load Capacitance (CL): 15 pF

Suitable for driving a moderate capacitive load without sacrificing performance.

Power Supplies (V): 1.8/5

Supports a range of supply voltages, providing flexibility in design and application.

Maximum Operating Temperature: 125 °C

Can operate reliably in high-temperature environments, suitable for industrial and automotive applications.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme cold conditions without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of voltages.

Technical Specifications

Logic Gates NLX2G04AMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-XDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

8.4 ns

Propagation Delay (tpd):

11 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX2G04AMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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