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NLX2G02FMUTCG

Onsemi

NLX2G02FMUTCG by Onsemi

NLX2G02FMUTCG by Onsemi is a Logic Gates IC with 9.5ns Propagation Delay, 2 Functions, and 2 Inputs. It operates at 1.8/5V with a load capacitance of 15pF. Ideal for military applications due to its CMOS technology and wide temperature range (-55 to 125 °C).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,818 parts In-Stock

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Vyrian

USA . 1,164 parts In-Stock

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Kulean Microsystems

USA . 5,841 parts In-Stock

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SupplyDigital Components

Austria . 4,748 parts In-Stock

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Problanco Electronics

Mexico . 4,455 parts In-Stock

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TANS Electronics

Latvia . 1,612 parts In-Stock

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Corphita

USA . 699 parts In-Stock

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699

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Corohmni

South Africa . 260 parts In-Stock

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UHIMA Technologies

Türkiye . 209 parts In-Stock

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Overview

Enhance your electronic projects with the NLX2G02FMUTCG by Onsemi. Known for their high-quality components, Onsemi delivers reliable logic gates that cater to various applications. This versatile product offers customers value and benefits with its fast propagation delay, low power consumption, and dual functionality. Perfect for military-grade technology, this logic gate is a must-have for any project requiring precision and efficiency. Elevate your designs with Onsemi's NLX2G02FMUTCG today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material is durable and suitable for a wide range of applications, making the product long-lasting.

Propagation Delay at Nominal Supply: 9.5 ns

Low propagation delay ensures fast signal processing, making this logic gate ideal for high-speed applications.

Surface Mount: YES

Surface mount technology allows for easy and compact PCB assembly, saving space and minimizing component footprint.

Nominal Supply Voltage / Vsup (V): 5

Compatible with a standard 5V supply voltage, making it easy to integrate into existing systems without the need for additional power conversion.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions and extended use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Logic Gates NLX2G02FMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N8

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

9.5 ns

Propagation Delay (tpd):

9.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX2G02FMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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