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NLX2G04MUTCG

Onsemi

NLX2G04MUTCG by Onsemi

NLX2G04MUTCG by Onsemi is a CMOS Logic Gate with 2 functions, 8.4ns propagation delay at 1.8V supply. It has a MILITARY temperature grade and operates b/w -55 to 125 °C. Ideal for applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,558 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,089 parts In-Stock

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TANS Electronics

Latvia . 6,597 parts In-Stock

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Kulean Microsystems

USA . 4,500 parts In-Stock

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Corphita

USA . 1,882 parts In-Stock

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Problanco Electronics

Mexico . 1,489 parts In-Stock

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UHIMA Technologies

Türkiye . 843 parts In-Stock

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Corohmni

South Africa . 83 parts In-Stock

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Overview

Discover the cutting-edge NLX2G04MUTCG logic gates by Onsemi, setting a new standard in performance and reliability. Crafted with precision and expertise, these logic gates offer unmatched speed and efficiency, making them perfect for a wide range of applications. From industrial automation to consumer electronics, this product delivers exceptional value and benefits to customers seeking top-notch quality and seamless functionality. Experience the difference with Onsemi logic gates - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates, making them suitable for various applications.

Propagation Delay At Nominal Supply: 8.4 ns

Low propagation delay ensures fast response time for the signals passing through the logic gates, making them efficient for time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V helps in reducing power consumption, making the logic gates energy-efficient.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, the logic gates can withstand harsh environmental conditions without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates suitable for a wide range of applications.

Technical Specifications

Logic Gates NLX2G04MUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.2 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

8.4 ns

Propagation Delay (tpd):

11 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX2G04MUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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