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NB6L16DT

Onsemi

NB6L16DT by Onsemi

NB6L16DT clock driver by Onsemi features a propagation delay of 0.18 ns, operating temperature range of -40 to 85 °C, and supply voltage from 2.375V to 3.465V. Ideal for industrial applications requiring differential input conditioning in a small outline package with gull wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,673 parts In-Stock

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Chip Stock

USA . 3,810 parts In-Stock

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Digiode

USA . 134 parts In-Stock

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AZTECH Wire

Italy . 342 parts In-Stock

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$12.670

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TANS Electronics

Latvia . 6,063 parts In-Stock

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Problanco Electronics

Mexico . 3,561 parts In-Stock

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Kulean Microsystems

USA . 2,391 parts In-Stock

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Corphita

USA . 1,474 parts In-Stock

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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SupplyDigital Components

Austria . 459 parts In-Stock

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Corohmni

South Africa . 360 parts In-Stock

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Microchip USA

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Perfect Parts

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Overview

The NB6L16DT by Onsemi is a high-quality Clock Drivers & Buffers that offers unmatched performance and reliability. Designed with precision and expertise, this product is perfect for a wide range of applications where timing accuracy is crucial. With Onsemi's reputation for excellence in manufacturing, you can trust that this product will deliver exceptional results every time. Experience the value and benefits of the NB6L16DT and take your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the clock driver, ensuring long-term reliability.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and reducing assembly time.

Input Conditioning: DIFFERENTIAL

Allows for cleaner signal processing and improved noise immunity, enhancing overall clock signal quality.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal supply voltage for efficient operation and performance of the clock driver.

Propagation Delay (tpd): 0.18 ns

Ensures fast and accurate signal transmission within the clock driver circuit, minimizing delays in data processing.

Maximum Operating Temperature: 85 °C

Suitable for a wide range of industrial environments and ensures stable operation even under high temperature conditions.

Technology: ECL

Uses Emitter-Coupled Logic technology, known for its high-speed performance and low power consumption, making it ideal for clock driver applications.

Technical Specifications

Clock Drivers & Buffers NB6L16DT attributes and parameters. Explore more Clock Drivers & Buffers devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -2.375V TO -3.465V

Family:

6L

Input Conditioning:

DIFFERENTIAL

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Logic IC Type:

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

8

No. of True Outputs:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Propagation Delay (tpd):

.18 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

.06 ns

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

2.375 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn90Pb10)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

NB6L16DT Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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