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KAI-11002-AAA-CP-B1

Onsemi

KAI-11002-AAA-CP-B1 by Onsemi

KAI-11002-AAA-CP-B1 by Onsemi is an image sensor with 9x9 um pixel size, 4008 horizontal pixels, and 2672 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 66 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,397 parts In-Stock

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Digiode

USA . 251 parts In-Stock

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AZTECH Wire

Italy . 789 parts In-Stock

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$15.370

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Problanco Electronics

Mexico . 8,031 parts In-Stock

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TANS Electronics

Latvia . 7,444 parts In-Stock

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SupplyDigital Components

Austria . 3,971 parts In-Stock

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Corphita

USA . 2,492 parts In-Stock

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Kulean Microsystems

USA . 2,067 parts In-Stock

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UHIMA Technologies

Türkiye . 594 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Perfect Parts

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Overview

Capture every moment with the KAI-11002-AAA-CP-B1 by Onsemi, a high-quality image sensor that exceeds expectations. Manufactured by Onsemi, known for their exceptional products, this image sensor offers unparalleled performance and reliability. Ideal for a wide range of applications, this sensor provides crisp and clear images with a dynamic range of 66 dB. From security systems to medical imaging, the KAI-11002-AAA-CP-B1 delivers value, benefits, and advantages that will elevate your projects to new heights. Experience the difference with Onsemi's innovative technology.

Feature Benefit Bullets

Pixel Size (um) 9X9

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage 15.5 V

Higher maximum supply voltage ensures stable and reliable performance.

Body Width 32.89 inch

Compact body width makes the sensor easy to integrate into various devices and systems.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture capabilities.

Body Height 5.97 mm

Low body height allows for a slim design and easy installation in space-constrained applications.

Package Shape or Style RECTANGULAR

Rectangular shape makes it easier to mount the sensor securely in place.

Minimum Supply Voltage 14.5 V

Lower minimum supply voltage ensures energy efficiency and extends the product's lifespan.

Maximum Operating Temperature 70 °C

High maximum operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel 4008

High horizontal pixel count enables the sensor to capture wide and detailed images.

Minimum Operating Temperature -50 °C

Low minimum operating temperature range ensures the sensor can perform in extreme cold conditions.

Housing CERAMIC

Ceramic housing offers durability and thermal stability for reliable long-term performance.

Dynamic Range 66 dB

Wide dynamic range allows the sensor to capture images with both bright and dark areas accurately.

Vertical Pixel 2672

High vertical pixel count enables the sensor to capture tall and detailed images.

Body Length/Diameter 44.45 mm

Compact body length/diameter for easy integration and installation.

Data Rate 28 Mbps

High data rate allows for fast and efficient data transfer for real-time image processing.

Termination Type SOLDER

Solder termination ensures secure and reliable connections for the sensor in the system.

Array Type INTERLINE

Interline array type provides fast readout speeds and efficient image capture capabilities.

Mounting Feature THROUGH HOLE MOUNT

Through hole mount allows for secure and stable mounting of the sensor in a variety of applications.

Technical Specifications

Image Sensors KAI-11002-AAA-CP-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 13 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS 1.37 INCH OPTICAL FORMAT

Array Type:

INTERLINE

Body Width:

32.89 inch

Body Height:

5.97 mm

Body Length/Diameter:

44.45 mm

Data Rate:

28 Mbps

Dynamic Range:

66 dB

Horizontal Pixel:

4008

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2672

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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