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KAC-12040-ABA-JD-BA

Onsemi

KAC-12040-ABA-JD-BA by Onsemi

KAC-12040-ABA-JD-BA by Onsemi is an image sensor with 4.70x4.70 um pixel size, 50 MHz master clock, and 4000 horizontal pixels. It is ideal for applications requiring a digital voltage output interface, such as frame arrays in cameras or imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 819 parts In-Stock

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Vyrian

USA . 796 parts In-Stock

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TANS Electronics

Latvia . 7,041 parts In-Stock

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SupplyDigital Components

Austria . 6,771 parts In-Stock

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Kulean Microsystems

USA . 5,639 parts In-Stock

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Problanco Electronics

Mexico . 2,382 parts In-Stock

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Corphita

USA . 2,269 parts In-Stock

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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Corohmni

South Africa . 339 parts In-Stock

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Overview

Enhance your imaging systems with the KAC-12040-ABA-JD-BA by Onsemi, a top-of-the-line image sensor designed to deliver unparalleled quality and precision. With a wide array of applications in industries such as security, automotive, and medical imaging, this cutting-edge product offers customers unmatched value and exceptional performance. Trust in the expertise of Onsemi, a renowned manufacturer known for producing high-quality sensors that push the boundaries of technology. Elevate your projects with the KAC-12040-ABA-JD-BA and experience the benefits of superior imaging capabilities like never before.

Feature Benefit Bullets

Pixel Size (um): 4.70X4.70

The small pixel size allows for high resolution images to be captured, making this image sensor a good choice for applications that require detailed imaging.

Maximum Supply Voltage: 2.1 V

The higher maximum supply voltage provides a wider operating range and better performance for this image sensor.

Master Clock: 50 MHz

The fast master clock speed of 50 MHz enables quick data processing, making this image sensor suitable for applications where high speed imaging is required.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature allows this image sensor to be used in a variety of environmental conditions, increasing its versatility.

Dynamic Range: 73 dB

The high dynamic range of 73 dB enables this image sensor to capture a wide range of light intensities accurately, making it a good choice for applications with varying lighting conditions.

Technical Specifications

Image Sensors KAC-12040-ABA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 1.71 TO 1.89 V, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

38.1 inch

Body Length/Diameter:

42.5 mm

Dynamic Range:

73 dB

Frame Rate:

70 fps

Horizontal Pixel:

4000

Housing:

CERAMIC

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

4/3

Output Interface Type:

SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

4.70X4.70

Sensors or Transducers Type:

Maximum Supply Voltage:

2.1 V

Minimum Supply Voltage:

1.9 V

Termination Type:

SOLDER

Vertical Pixel:

3000

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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