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KAC-12040-CBA-JD-AE

Onsemi

KAC-12040-CBA-JD-AE by Onsemi

The Onsemi KAC-12040-CBA-JD-AE is an image sensor with 4.70x4.70 um pixel size, 50 MHz master clock, and 4000 horizontal pixels. It is used in applications requiring a digital voltage output interface, such as frame arrays for high-speed imaging at up to 70 fps with a dynamic range of 72 dB.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,155 parts In-Stock

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Vyrian

USA . 1,487 parts In-Stock

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TANS Electronics

Latvia . 7,515 parts In-Stock

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Problanco Electronics

Mexico . 3,824 parts In-Stock

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SupplyDigital Components

Austria . 3,134 parts In-Stock

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Kulean Microsystems

USA . 1,611 parts In-Stock

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UHIMA Technologies

Türkiye . 838 parts In-Stock

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Corphita

USA . 547 parts In-Stock

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Corohmni

South Africa . 395 parts In-Stock

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Overview

Elevate your imaging experience with the KAC-12040-CBA-JD-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality image sensors, and this product is no exception. Perfect for a wide range of applications, this image sensor offers unparalleled value with its high performance and reliable output. Capture stunning visuals with ease and precision, thanks to the cutting-edge technology packed into this sensor. Upgrade your imaging capabilities today with the KAC-12040-CBA-JD-AE and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 4.70X4.70

The small pixel size allows for high resolution and detailed images to be captured.

Maximum Supply Voltage: 2.1 V

Allows for efficient power usage and compatibility with standard voltage levels.

Master Clock: 50 MHz

Ensures fast and accurate data processing for real-time imaging applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer high image quality, low power consumption, and fast data readout.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies integration with digital systems and reduces noise interference.

Dynamic Range: 72 dB

Wide dynamic range allows for capturing both bright and dark details in a scene.

Optical Format (inch): 4/3

Standard optical format for compatibility with various lenses and imaging systems.

Frame Rate: 70 fps

High frame rate enables smooth video recording and fast image capture.

Technical Specifications

Image Sensors KAC-12040-CBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 1.71 TO 1.89 V, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

38.1 inch

Body Length/Diameter:

42.5 mm

Dynamic Range:

72 dB

Frame Rate:

70 fps

Horizontal Pixel:

4000

Housing:

CERAMIC

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

4/3

Output Interface Type:

4-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

4.70X4.70

Sensors or Transducers Type:

Maximum Supply Voltage:

2.1 V

Minimum Supply Voltage:

1.9 V

Termination Type:

SOLDER

Vertical Pixel:

3000

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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