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FJPF5021R

Onsemi

FJPF5021R by Onsemi

The Onsemi FJPF5021R is a NPN Power BJT with max. Vce of 500V and max. Ic of 5A. Ideal for switching applications, it has a min hFE of 15 and fT of 15MHz. The transistor comes in a plastic/epoxy package with flange mount style and isolated case connection.

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1k+

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Digiode

USA . 1,103 parts In-Stock

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Native Components

USA . 162 parts In-Stock

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$0.294

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Northwest PG Solutions

USA . 121 parts In-Stock

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SupplyDigital Components

Austria . 7,177 parts In-Stock

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Corphita

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Supply Digital

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TANS Electronics

Latvia . 911 parts In-Stock

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UHIMA Technologies

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Corohmni

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Problanco Electronics

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Kulean Microsystems

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Overview

Boost your power management capabilities with the FJPF5021R by Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for a wide range of applications. This NPN Power Bipolar Junction Transistor is designed for switching tasks, making it perfect for electronic devices that require precise control and fast response times. With a maximum collector-emitter voltage of 500V and a maximum collector current of 5A, this transistor offers exceptional performance and durability. Upgrade your projects with the superior value and benefits that the FJPF5021R provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications and are easier to control, making this product versatile and suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easier to use in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and efficient performance when used in switching circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into circuit boards or systems, making installation straightforward.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection, making it suitable for applications where stability is crucial.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in various circuit configurations, increasing flexibility in design.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy installation and secure mounting, making it a convenient choice for many applications.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor provides consistent amplification of the input signal, ensuring reliable performance in circuits.

Maximum Collector-Emitter Voltage: 500 V

The high maximum collector-emitter voltage of 500V allows for use in applications where high voltage operation is required, providing versatility.

Transistor Element Material: SILICON

Silicon material in the transistor element offers excellent performance and reliability, ensuring long-term functionality in various applications.

Maximum Collector Current (IC): 5 A

Capable of handling a maximum collector current of 5A, this transistor is suitable for applications that require high current switching capabilities.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and enhances ease of use, making it suitable for a wide range of users.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and ensures stable performance, making it a reliable choice for demanding applications.

Nominal Transition Frequency (fT): 15 MHz

With a nominal transition frequency of 15 MHz, this transistor offers fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF5021R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJPF5021R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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