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FJPF3305H1

Onsemi

FJPF3305H1 by Onsemi

FJPF3305H1 by Onsemi is a NPN Power BJT with VCEsat of 1V, IC of 4A, and hFE of 19. Ideal for switching applications, it has a max power dissipation of 30W and operates up to 150 °C. Its rectangular package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,558 parts In-Stock

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Vyrian

USA . 2,330 parts In-Stock

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SupplyDigital Components

Austria . 5,712 parts In-Stock

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TANS Electronics

Latvia . 5,647 parts In-Stock

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Supply Digital

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Kulean Microsystems

USA . 1,939 parts In-Stock

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Northwest PG Solutions

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Corphita

USA . 763 parts In-Stock

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UHIMA Technologies

Türkiye . 747 parts In-Stock

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Native Components

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Corohmni

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Problanco Electronics

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Overview

Elevate your power systems with the FJPF3305H1 by Onsemi, a top-of-the-line Power Bipolar Junction Transistor that offers unparalleled quality and reliability. With its NPN configuration and switching capabilities, this transistor is perfect for a wide range of applications. From enhancing efficiency to ensuring optimal performance, this product delivers exceptional value to customers looking for cutting-edge solutions. Trust Onsemi's expertise in semiconductor manufacturing and experience the benefits of superior technology with the FJPF3305H1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, reducing the risk of damage during handling and operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Simplified design and easy integration into circuits with single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum VCEsat: 1 V

Low saturation voltage minimizes power loss and improves efficiency during switching operation.

Package Shape: RECTANGULAR

Convenient shape for mounting and integration into electronic devices and systems.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto circuit boards and secure anchoring for reliable connections.

Maximum Fall Time (tf): 900 ns

Fast fall time allows for quick switching transitions, essential in high-speed applications.

No. of Terminals: 3

Simple 3-terminal configuration for easy connection and circuit layout.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability ensures the transistor can handle demanding loads and environments.

Package Style (Meter): FLANGE MOUNT

Flange mount design for secure attachment and heat dissipation in larger systems.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in various environments without performance degradation.

Maximum Collector-Emitter Voltage: 400 V

High voltage rating for reliable operation in circuits with elevated voltages.

Transistor Element Material: SILICON

Silicon material offers excellent performance and reliability in a variety of circuit applications.

Maximum Turn On Time (ton): 800 ns

Fast turn-on time improves efficiency and response time in switching applications.

Maximum Collector Current (IC): 4 A

High collector current rating allows for handling of substantial current loads in the circuit.

Maximum Turn Off Time (toff): 4900 ns

Ensures proper turn-off timing for stable and reliable operation during switching transitions.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connections for ease of use.

Case Connection: ISOLATED

Isolated case connection for enhanced safety and insulation in the circuit.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency for improved performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF3305H1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

19

Maximum Fall Time (tf):

900 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

4900 ns

Maximum Turn On Time (ton):

800 ns

Maximum VCEsat:

1 V

Trade Compliance

FJPF3305H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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