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FJPF13007H2

Onsemi

FJPF13007H2 by Onsemi

FJPF13007H2 by Onsemi is a NPN Power BJT for switching applications. It features VCEsat of 3V, IC of 8A, and Ptot of 40W. Ideal for high-power switching circuits due to its fast tf and ton characteristics.

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2

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1k+

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Vyrian

USA . 1,502 parts In-Stock

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Digiode

USA . 685 parts In-Stock

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Native Components

USA . 129 parts In-Stock

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$29.880

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$28.685

129

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$28.685

Northwest PG Solutions

USA . 1,571 parts In-Stock

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$32.868

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QUARKTWIN TECHNOLOGY LTD

USA . 26,938 parts In-Stock

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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A-Z Elektronik GmbH

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Problanco Electronics

Mexico . 4,933 parts In-Stock

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Alle Elektronik GmbH

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TANS Electronics

Latvia . 4,210 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Corphita

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Authorized Procurement Solutions

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UHIMA Technologies

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Corohmni

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Overview

Experience the superior quality and reliability of Onsemi with the FJPF13007H2 Power Bipolar Junction Transistor. Designed for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 400V and a maximum collector current of 8A. With a minimum DC current gain of 26 and a nominal transition frequency of 4MHz, this transistor provides efficient power control and performance. Trust Onsemi's expertise in semiconductor manufacturing and enhance your electronic projects with the FJPF13007H2 for optimal results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high performance and efficiency.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low saturation voltage for efficient operation.

Maximum VCEsat: 3 V

The low VCEsat voltage of 3 V ensures minimal power loss and improved efficiency during operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, enabling seamless integration into electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and reliable performance in various circuit board environments.

Maximum Fall Time (tf): 700 ns

The fast fall time of 700 ns ensures quick response and high-speed switching capabilities for time-sensitive applications.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit configurations and connectivity options for different circuit layouts.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation rating of 40 W, this transistor can handle high power loads and operate reliably in demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and mechanical support for the transistor, making it suitable for rugged and industrial environments.

Minimum DC Current Gain (hFE): 26

The minimum DC current gain of 26 ensures consistent and reliable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments and maintain stable performance.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating of 400 V offers protection against voltage surges and ensures safe operation in high-voltage applications.

Transistor Element Material: SILICON

Silicon material provides enhanced conductivity and reliability for the transistor, ensuring high performance and longevity in diverse applications.

Maximum Turn On Time (ton): 1600 ns

The maximum turn-on time of 1600 ns enables quick activation and response times, making the transistor suitable for fast-switching applications.

Maximum Collector Current (IC): 8 A

With a high collector current rating of 8 A, this transistor can handle substantial current loads and deliver reliable performance in power-hungry circuits.

Maximum Turn Off Time (toff): 3700 ns

The maximum turn-off time of 3700 ns ensures efficient switching and low power dissipation during the deactivation phase of the transistor.

Terminal Position: SINGLE

Having a single terminal position simplifies circuit connections and reduces complexity in circuit designs, enhancing overall usability.

Case Connection: ISOLATED

The isolated case connection provides protection against electrical interference and improves the reliability of the transistor in diverse operating conditions.

Nominal Transition Frequency (fT): 4 MHz

The nominal transition frequency of 4 MHz indicates the transistor's ability to switch and amplify signals efficiently at high frequencies, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF13007H2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

26

Maximum Fall Time (tf):

700 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3700 ns

Maximum Turn On Time (ton):

1600 ns

Maximum VCEsat:

3 V

Trade Compliance

FJPF13007H2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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