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FJPF2145TU

Onsemi

FJPF2145TU by Onsemi

FJPF2145TU by Onsemi is a NPN Power BJT with 800V VCEO, 5A IC, and 40W Ptot. Ideal for switching applications, it features a single configuration with built-in FET and diode in a rectangular package suitable for flange mount. Operating up to 125°C, this transistor has an hFE of min 8 and fT of 28.4MHz.

Median Price

$0.617

Lifecycle Status

EOL

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5 parts In-Stock

1+ parts

$0.331

100+ parts

-

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5

$0.331

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Rochester

USA . 1,117 parts In-Stock

1+ parts

$0.617

100+ parts

$0.580

1k+ parts

$0.524

10k+ parts

-

1,117

$0.617

$0.580

$0.524

-

Element14

Singapore . 1,266 parts In-Stock

1+ parts

$1.405

100+ parts

$1.109

1k+ parts

$0.728

10k+ parts

-

1,266

$1.405

$1.109

$0.728

-

Farnell

UK . 2,117 parts In-Stock

1+ parts

$1.543

100+ parts

$1.076

1k+ parts

$0.706

10k+ parts

$0.692

2,117

$1.543

$1.076

$0.706

$0.692

Flip Electronics (Authorized)

USA . 1,881 parts In-Stock

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Verical

USA . 35 parts In-Stock

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$0.457

1k+ parts

$0.447

10k+ parts

$0.420

35

-

$0.457

$0.447

$0.420

Chip1Stop

Japan . 25 parts In-Stock

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25

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Distributors (In-Stock)

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Vyrian

USA . 1,273 parts In-Stock

1+ parts

$0.457

100+ parts

-

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1,273

$0.457

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Digiode

USA . 2,632 parts In-Stock

1+ parts

$0.586

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2,632

$0.586

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Flip Electronics

USA . 1,248 parts In-Stock

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1,248

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Distributors (Availability)

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Corohmni

South Africa . 370 parts In-Stock

1+ parts

$0.457

100+ parts

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370

$0.457

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Corphita

USA . 2,313 parts In-Stock

1+ parts

$0.555

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2,313

$0.555

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Continental Prestige Electronics

USA . 1,466 parts In-Stock

1+ parts

$1.210

100+ parts

$0.844

1k+ parts

$0.554

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1,466

$1.210

$0.844

$0.554

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Microchip USA

USA . 3,099 parts In-Stock

1+ parts

$3.640

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3,099

$3.640

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Native Components

USA . 385 parts In-Stock

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$29.503

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385

$29.503

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Northwest PG Solutions

USA . 2,029 parts In-Stock

1+ parts

$32.453

100+ parts

$29.207

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2,029

$32.453

$29.207

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,332 parts In-Stock

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Andel Nordic

Denmark . 5,889 parts In-Stock

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TANS Electronics

Latvia . 3,432 parts In-Stock

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Perfect Parts

USA . 3,125 parts In-Stock

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Supply Digital

USA . 2,160 parts In-Stock

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Problanco Electronics

Mexico . 1,583 parts In-Stock

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Kulean Microsystems

USA . 1,165 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 220 parts In-Stock

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UHIMA Technologies

Türkiye . 80 parts In-Stock

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80

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Overview

Enhance your electronic devices with the FJPF2145TU Power Bipolar Junction Transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance you can trust. Ideal for switching applications, this NPN transistor offers a maximum power dissipation of 40W and a maximum collector-emitter voltage of 800V, providing exceptional power management capabilities. With a minimum DC current gain of 8 and a nominal transition frequency of 28.4 MHz, this transistor ensures seamless operation in a variety of circuits. Upgrade your projects with the FJPF2145TU and experience the value and benefits of superior quality components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits due to their high efficiency and fast switching speeds.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

Having a built-in FET and diode simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, such as power supplies and motor control.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount the transistor securely on the PCB.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability ensures the transistor can handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 800 V

High voltage rating allows the transistor to be used in a wide range of applications, including high voltage circuits.

Maximum Collector Current (IC): 5 A

Capable of handling high currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 28.4 MHz

High transition frequency allows for fast signal switching, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF2145TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

800 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJPF2145TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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