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FJPF13009H1TU

Onsemi

FJPF13009H1TU by Onsemi

FJPF13009H1TU by Onsemi is a NPN Power BJT with 400V VCEO, 12A IC, and 50W Ptot. Ideal for switching applications due to its high power dissipation capability and low hFE of 8. Packaged in PLASTIC/EPOXY, it has a flange mount style for through-hole mounting.

Median Price

$1.190

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$1.882

100+ parts

$1.713

1k+ parts

$1.543

10k+ parts

-

200

$1.882

$1.713

$1.543

-

Rochester

USA . 30,260 parts In-Stock

1+ parts

-

100+ parts

$1.040

1k+ parts

$0.863

10k+ parts

$0.770

30,260

-

$1.040

$0.863

$0.770

DigiKey

USA . 30,198 parts In-Stock

1+ parts

-

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$1.300

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30,198

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$1.300

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Verical

USA . 28,198 parts In-Stock

1+ parts

-

100+ parts

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$1.079

10k+ parts

$0.962

28,198

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-

$1.079

$0.962

Flip Electronics (Authorized)

USA . 2,247 parts In-Stock

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2,247

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Digiode

USA . 2,288 parts In-Stock

1+ parts

$0.813

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-

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2,288

$0.813

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.056

100+ parts

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50

$1.056

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Vyrian

USA . 9,837 parts In-Stock

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9,837

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Flip Electronics

USA . 2,247 parts In-Stock

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2,247

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Distributors (Availability)

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Corphita

USA . 2,110 parts In-Stock

1+ parts

$0.770

100+ parts

-

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2,110

$0.770

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Corohmni

South Africa . 148 parts In-Stock

1+ parts

$1.131

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148

$1.131

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Ampacity Inc.

Singapore . 9,953 parts In-Stock

1+ parts

$1.580

100+ parts

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9,953

$1.580

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.882

100+ parts

$1.713

1k+ parts

$1.543

10k+ parts

-

200

$1.882

$1.713

$1.543

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Microchip USA

USA . 471 parts In-Stock

1+ parts

$15.015

100+ parts

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471

$15.015

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QUARKTWIN TECHNOLOGY LTD

USA . 18,664 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,237 parts In-Stock

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TANS Electronics

Latvia . 6,210 parts In-Stock

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Problanco Electronics

Mexico . 2,917 parts In-Stock

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2,917

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Perfect Parts

USA . 1,304 parts In-Stock

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1,304

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SupplyDigital Components

Austria . 1,102 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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Supply Digital

USA . 877 parts In-Stock

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877

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$1.034

1k+ parts

$1.003

10k+ parts

$0.982

100

-

$1.034

$1.003

$0.982

UHIMA Technologies

Türkiye . 91 parts In-Stock

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91

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Overview

Discover the power and reliability of the FJPF13009H1TU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality products like this Power Bipolar Junction Transistor for various applications such as switching. With a maximum collector-emitter voltage of 400V and a robust construction, this NPN transistor offers exceptional performance and durability. Trust Onsemi to provide you with the tools you need to take your projects to the next level. Upgrade to the FJPF13009H1TU and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for different applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in switching circuits.

Maximum Power Dissipation: 50 W

Can handle higher power levels, making it suitable for applications that require high power output.

Maximum Collector-Emitter Voltage: 400 V

Can withstand higher voltage levels, increasing the range of applications it can be used in.

Maximum Collector Current (IC): 12 A

Capable of handling higher current levels, making it suitable for applications that require high current output.

Nominal Transition Frequency (fT): 4 MHz

Higher transition frequency allows for faster switching speeds, improving overall performance in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF13009H1TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJPF13009H1TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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