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FJPF5021

Onsemi

FJPF5021 by Onsemi

FJPF5021 by Onsemi is a NPN Power BJT with max. Vce of 500V and max. Ic of 5A. It has a min. hFE of 8, ideal for switching applications at up to 150 °C. This transistor comes in a flange mount package suitable for isolated case connections.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,449 parts In-Stock

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Digiode

USA . 1,506 parts In-Stock

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Andel Nordic

Denmark . 2,801 parts In-Stock

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$11.472

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$11.013

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$11.013

2,801

$11.472

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$11.013

$11.013

Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Kulean Microsystems

USA . 6,993 parts In-Stock

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Problanco Electronics

Mexico . 6,598 parts In-Stock

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SupplyDigital Components

Austria . 6,541 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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TANS Electronics

Latvia . 3,868 parts In-Stock

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Corphita

USA . 2,101 parts In-Stock

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Northwest PG Solutions

USA . 1,654 parts In-Stock

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UHIMA Technologies

Türkiye . 791 parts In-Stock

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Native Components

USA . 635 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 59 parts In-Stock

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Overview

Unleash the power of innovation with the FJPF5021 by Onsemi! This top-notch Power Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability, thanks to Onsemi's unmatched reputation in the industry. Ideal for switching applications, this NPN transistor provides a seamless solution for your electronic projects. With a maximum collector-emitter voltage of 500V and a collector current of 5A, this transistor delivers exceptional performance in a compact and convenient package. Trust the FJPF5021 to exceed your expectations and take your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, ensuring safety and reliability in operation.

Polarity or Channel Type: NPN

Suitable for use in most common electronic circuits and applications.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: SWITCHING

Capable of handling high-speed switching operations efficiently.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, increasing durability and reliability.

Maximum Collector-Emitter Voltage: 500 V

Suitable for applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 5 A

Ability to handle high current loads for various applications.

Nominal Transition Frequency (fT): 15 MHz

Capable of high-frequency switching operations, making it suitable for a wide range of applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF5021 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJPF5021 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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