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FJPF5027N

Onsemi

FJPF5027N by Onsemi

FJPF5027N by Onsemi is a NPN Power BJT with VCEsat of 2V, IC of 3A, and Ptot of 40W. Ideal for switching applications, it operates at up to 150 °C with fT of 15MHz. Its through-hole package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Digiode

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Vyrian

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Kulean Microsystems

USA . 6,250 parts In-Stock

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TANS Electronics

Latvia . 5,862 parts In-Stock

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Problanco Electronics

Mexico . 3,212 parts In-Stock

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SupplyDigital Components

Austria . 3,011 parts In-Stock

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Supply Digital

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Northwest PG Solutions

USA . 1,412 parts In-Stock

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Corphita

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Corohmni

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UHIMA Technologies

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Overview

Discover the power of the FJPF5027N by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum VCEsat of 2V and a maximum collector-emitter voltage of 800V, this NPN transistor offers high performance and efficiency. Manufactured by Onsemi, a trusted name in the industry, this transistor guarantees reliable operation and long-lasting durability. Whether you're looking to upgrade your electronic devices or enhance your projects, the FJPF5027N delivers exceptional value and benefits to customers seeking superior quality components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Maximum VCEsat: 2 V

Low VCEsat value helps in reducing power losses and improves efficiency.

Package Shape: RECTANGULAR

Provides a compact form factor for easy PCB integration.

Terminal Form: THROUGH-HOLE

Allows for easy mounting on PCBs and ensures secure connections.

Maximum Fall Time (tf): 300 ns

Fast fall time ensures quick switching operation.

No. of Terminals: 3

Simplified connection setup for ease of use in circuits.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle large loads.

Package Style (Meter): FLANGE MOUNT

Facilitates secure mounting and thermal management.

Minimum DC Current Gain (hFE): 10

Ensures proper amplification of the input signal.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatile use.

Maximum Collector-Emitter Voltage: 800 V

High voltage rating for handling various applications.

Transistor Element Material: SILICON

Silicon material provides reliability and performance in electronic applications.

Maximum Turn On Time (ton): 500 ns

Fast turn-on time ensures quick response in switching operations.

Maximum Collector Current (IC): 3 A

High collector current rating for handling large currents.

Maximum Turn Off Time (toff): 3300 ns

Reasonable turn-off time for efficient switching operations.

Terminal Position: SINGLE

Simplified terminal layout for easy connectivity.

Case Connection: ISOLATED

Isolated case connection for enhanced safety and reliability.

Nominal Transition Frequency (fT): 15 MHz

High transition frequency for fast signal processing and switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF5027N attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

10

Maximum Fall Time (tf):

300 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3300 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

2 V

Trade Compliance

FJPF5027N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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