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FJPF5021O

Onsemi

FJPF5021O by Onsemi

FJPF5021O by Onsemi is a NPN Power BJT with max. VCE of 500V and max. IC of 5A. With hFE of 20, it's ideal for switching applications due to its high collector current capacity and voltage rating. The transistor's silicon element material and flange mount package make it suitable for high-power switching circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,486 parts In-Stock

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Vyrian

USA . 1,148 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,854 parts In-Stock

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Problanco Electronics

Mexico . 7,509 parts In-Stock

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Kulean Microsystems

USA . 5,512 parts In-Stock

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SupplyDigital Components

Austria . 2,533 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 944 parts In-Stock

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Native Components

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 491 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the high-quality FJPF5021O Power BJT from Onsemi. Designed for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 500V and a maximum collector current of 5A, ensuring reliable performance. With a minimum DC current gain of 20 and a nominal transition frequency of 15 MHz, the FJPF5021O is ideal for a wide range of applications. Trust in Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Upgrade your designs with the FJPF5021O and experience enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections.

No. of Terminals: 3

Three terminals simplify the connection process and prevent incorrect wiring.

Package Style (Meter): FLANGE MOUNT

Flange mount style enables easy installation and secure positioning in electronic systems.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures reliable signal amplification.

Maximum Collector-Emitter Voltage: 500 V

High maximum collector-emitter voltage rating provides flexibility in various circuit applications.

Transistor Element Material: SILICON

Silicon-based transistors offer improved thermal stability and reliability.

Maximum Collector Current (IC): 5 A

A maximum collector current of 5 A allows for handling of high-power loads.

Terminal Position: SINGLE

Single terminal position simplifies installation and prevents connection errors.

Case Connection: ISOLATED

Isolated case connection provides enhanced safety and protection in high-voltage applications.

Nominal Transition Frequency (fT): 15 MHz

High nominal transition frequency of 15 MHz ensures fast switching speeds and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF5021O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJPF5021O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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