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FJPF3305H1TU

Onsemi

FJPF3305H1TU by Onsemi

FJPF3305H1TU by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 4A, and min. DC current gain of 19. Ideal for switching applications in various industries due to its single configuration and isolated case connection.

Median Price

$0.920

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 43 parts In-Stock

1+ parts

$1.600

100+ parts

$1.050

1k+ parts

$0.829

10k+ parts

$0.778

43

$1.600

$1.050

$0.829

$0.778

DigiKey

USA . 122 parts In-Stock

1+ parts

$2.390

100+ parts

$1.047

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-

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122

$2.390

$1.047

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Rochester

USA . 240,104 parts In-Stock

1+ parts

-

100+ parts

$0.553

1k+ parts

$0.459

10k+ parts

$0.410

240,104

-

$0.553

$0.459

$0.410

Farnell

UK . 182,520 parts In-Stock

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-

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$0.920

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182,520

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-

$0.920

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Verical

USA . 173,200 parts In-Stock

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-

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$0.574

10k+ parts

$0.512

173,200

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$0.574

$0.512

Flip Electronics (Authorized)

USA . 2,000 parts In-Stock

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2,000

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Distributors (In-Stock)

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Digiode

USA . 1,065 parts In-Stock

1+ parts

$0.431

100+ parts

-

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1,065

$0.431

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Vyrian

USA . 2,314 parts In-Stock

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$0.454

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2,314

$0.454

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Flip Electronics

USA . 2,000 parts In-Stock

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2,000

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Distributors (Availability)

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Corphita

USA . 1,618 parts In-Stock

1+ parts

$0.409

100+ parts

-

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1,618

$0.409

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Corohmni

South Africa . 98 parts In-Stock

1+ parts

$0.781

100+ parts

-

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98

$0.781

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.305

100+ parts

$1.188

1k+ parts

$1.070

10k+ parts

-

40

$1.305

$1.188

$1.070

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Continental Prestige Electronics

USA . 253,700 parts In-Stock

1+ parts

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100+ parts

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$0.716

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253,700

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$0.716

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Metaverse IC Inc.

Canada . 175,520 parts In-Stock

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175,520

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QUARKTWIN TECHNOLOGY LTD

USA . 25,086 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,361 parts In-Stock

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7,361

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Microchip USA

USA . 6,537 parts In-Stock

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Problanco Electronics

Mexico . 6,523 parts In-Stock

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TANS Electronics

Latvia . 6,280 parts In-Stock

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6,280

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Kulean Microsystems

USA . 3,062 parts In-Stock

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Perfect Parts

USA . 1,488 parts In-Stock

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Northwest PG Solutions

USA . 1,454 parts In-Stock

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1,454

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Supply Digital

USA . 986 parts In-Stock

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986

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SupplyDigital Components

Austria . 954 parts In-Stock

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954

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Native Components

USA . 315 parts In-Stock

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315

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UHIMA Technologies

Türkiye . 303 parts In-Stock

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Overview

Unlock the power of efficiency and reliability with the FJPF3305H1TU by Onsemi. As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors for various applications, ensuring seamless performance and durability. With its NPN configuration and switching capabilities, this transistor provides unmatched value and benefits to customers seeking optimal functionality and convenience. Trust Onsemi to provide the cutting-edge technology you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE

SINGLE configuration makes it easy to use and integrate into circuits.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in voltage and current.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection.

No. of Terminals: 3

Simple 3-terminal design for easy connection and compatibility with standard circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting on a surface.

Minimum DC Current Gain (hFE): 19

A higher minimum current gain ensures consistent and reliable performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can handle a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 400 V

The high maximum voltage rating makes this transistor suitable for a variety of high-power applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and efficiency.

Maximum Collector Current (IC): 4 A

With a high collector current rating, this transistor can handle strong currents.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and conductivity for stable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection.

Case Connection: ISOLATED

Isolated case connection helps prevent cross-talk and interference in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF3305H1TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

19

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJPF3305H1TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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