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FJPF13009H2TU

Onsemi

FJPF13009H2TU by Onsemi

FJPF13009H2TU by Onsemi is a NPN BJT transistor with 400V VCEO, 12A IC, and 50W Ptot. Ideal for switching applications, it has a min hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.846

Lifecycle Status

EOL

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 120 parts In-Stock

1+ parts

$0.441

100+ parts

$0.381

1k+ parts

$0.374

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-

120

$0.441

$0.381

$0.374

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Arrow

USA . 399 parts In-Stock

1+ parts

$0.514

100+ parts

-

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399

$0.514

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DigiKey

USA . 73 parts In-Stock

1+ parts

$2.200

100+ parts

$1.766

1k+ parts

$1.766

10k+ parts

$1.766

73

$2.200

$1.766

$1.766

$1.766

Rochester

USA . 59,332 parts In-Stock

1+ parts

-

100+ parts

$0.846

1k+ parts

$0.702

10k+ parts

$0.626

59,332

-

$0.846

$0.702

$0.626

Verical

USA . 52,700 parts In-Stock

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-

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-

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$0.877

10k+ parts

$0.782

52,700

-

-

$0.877

$0.782

Flip Electronics (Authorized)

USA . 466 parts In-Stock

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-

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466

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Distributors (In-Stock)

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Digiode

USA . 2,387 parts In-Stock

1+ parts

$0.488

100+ parts

-

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2,387

$0.488

-

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Vyrian

USA . 2,230 parts In-Stock

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$0.514

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2,230

$0.514

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ACDS - Activité Composants Distribution Service

France . 690 parts In-Stock

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690

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Flip Electronics

USA . 466 parts In-Stock

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466

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Distributors (Availability)

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Corphita

USA . 1,067 parts In-Stock

1+ parts

$0.462

100+ parts

-

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1,067

$0.462

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-

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Corohmni

South Africa . 433 parts In-Stock

1+ parts

$0.514

100+ parts

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433

$0.514

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Metaverse IC Inc.

Canada . 20,493 parts In-Stock

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20,493

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QUARKTWIN TECHNOLOGY LTD

USA . 18,854 parts In-Stock

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18,854

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A-Z Elektronik GmbH

Germany . 6,590 parts In-Stock

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6,590

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Kulean Microsystems

USA . 5,136 parts In-Stock

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5,136

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Microchip USA

USA . 4,139 parts In-Stock

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4,139

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Perfect Parts

USA . 3,026 parts In-Stock

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3,026

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Problanco Electronics

Mexico . 2,306 parts In-Stock

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2,306

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TANS Electronics

Latvia . 2,257 parts In-Stock

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2,257

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SupplyDigital Components

Austria . 2,101 parts In-Stock

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2,101

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Supply Digital

USA . 1,472 parts In-Stock

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1,472

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GreenTree Electronics

Israel . 934 parts In-Stock

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934

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Northwest PG Solutions

USA . 872 parts In-Stock

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$4.414

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872

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$4.414

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Native Components

USA . 871 parts In-Stock

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$4.369

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871

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$4.369

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Authorized Procurement Solutions

USA . 834 parts In-Stock

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834

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UHIMA Technologies

Türkiye . 404 parts In-Stock

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404

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Overview

Enhance the performance of your electronic devices with the FJPF13009H2TU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 50W, this NPN transistor offers reliability and efficiency. Whether you're working on industrial equipment, automotive systems, or consumer electronics, this transistor provides the power and stability you need. Upgrade your projects today with the FJPF13009H2TU and experience the superior quality and performance Onsemi is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and reliability, making the transistor suitable for various applications and environments.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into circuits and compatibility with other components in typical electronic designs.

Configuration: SINGLE

The single configuration simplifies circuit design and offers ease of use for applications that require a single transistor component.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient performance in various electronic switching circuits.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy mounting and installation in electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and stable connections, making the transistor suitable for rugged environments and applications.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation rating, this transistor can handle high power loads and operate reliably under demanding conditions.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and heat dissipation, ensuring optimal performance and longevity of the transistor.

Minimum DC Current Gain (hFE): 15

The high minimum DC current gain ensures consistent and reliable amplification of current signal in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and operate efficiently in various thermal conditions.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage loads and operate safely in high voltage circuits.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance, reliability, and efficiency in electronic circuits compared to other materials.

Maximum Collector Current (IC): 12 A

With a high maximum collector current rating, this transistor can handle large current flows and deliver robust performance in various circuit applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections, enhancing the longevity and performance of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection of the transistor in electronic circuits, offering ease of use and flexibility in circuit design.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical shorts and interference, enhancing the reliability and stability of the transistor in electronic applications.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency allows for fast switching speeds and efficient performance in high-frequency electronic circuits, making this transistor suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF13009H2TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJPF13009H2TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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