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FJPF13007

Onsemi

FJPF13007 by Onsemi

FJPF13007 by Onsemi is a NPN Power BJT with max VCEsat of 3V, IC of 8A, and Pdiss of 40W. Ideal for switching applications, it has ton of 1600ns and toff of 3700ns. The transistor operates at up to 150 °C and has a fT of 4MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,533 parts In-Stock

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Digiode

USA . 1,881 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 3,146 parts In-Stock

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$1.487

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$1.427

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$1.427

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$1.427

Native Components

USA . 215 parts In-Stock

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$1.745

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Northwest PG Solutions

USA . 633 parts In-Stock

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$1.919

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QUARKTWIN TECHNOLOGY LTD

USA . 26,425 parts In-Stock

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Kulean Microsystems

USA . 6,597 parts In-Stock

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Problanco Electronics

Mexico . 6,409 parts In-Stock

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TANS Electronics

Latvia . 4,169 parts In-Stock

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Supply Digital

USA . 2,774 parts In-Stock

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SupplyDigital Components

Austria . 2,285 parts In-Stock

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Corphita

USA . 1,771 parts In-Stock

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UHIMA Technologies

Türkiye . 838 parts In-Stock

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Elevate your power management capabilities with the FJPF13007 by Onsemi – a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted industry leader, this NPN transistor offers unparalleled performance and reliability. From its efficient design to its impressive power dissipation capacity, this product delivers exceptional value to customers seeking superior switching solutions. Upgrade your electronic projects with the FJPF13007 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplified design with a single transistor, easy to integrate into circuits.

Maximum VCEsat: 3 V

Low VCEsat reduces power dissipation and improves efficiency.

Package Shape: RECTANGULAR

Space-saving design for compact circuit layouts.

Terminal Form: THROUGH-HOLE

Easy installation and soldering in through-hole PCBs.

Maximum Fall Time (tf): 700 ns

Fast switching speed for responsive performance.

No. of Terminals: 3

Simplified pin configuration for easy connection.

Maximum Power Dissipation (Abs): 40 W

High power handling capability for demanding applications.

Package Style (Meter): FLANGE MOUNT

Secure mounting for stability and heat dissipation.

Minimum DC Current Gain (hFE): 5

Consistent and reliable amplification for signal processing.

Maximum Operating Temperature: 150 °C

Wide temperature tolerance for versatile usage environments.

Maximum Collector-Emitter Voltage: 400 V

High voltage handling capability for diverse applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stability.

Maximum Turn On Time (ton): 1600 ns

Reduced turn-on time for efficient switching operations.

Maximum Collector Current (IC): 8 A

High IC rating for handling current spikes and surges.

Maximum Turn Off Time (toff): 3700 ns

Fast turn-off time to minimize switching losses.

Terminal Position: SINGLE

Simplified pin arrangement for straightforward connections.

Case Connection: ISOLATED

Isolated case connection for improved safety and reliability.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency for fast signal processing and switching speed.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF13007 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

Maximum Fall Time (tf):

700 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3700 ns

Maximum Turn On Time (ton):

1600 ns

Maximum VCEsat:

3 V

Trade Compliance

FJPF13007 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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