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FJPF13007H1

Onsemi

FJPF13007H1 by Onsemi

FJPF13007H1 by Onsemi is a NPN Power BJT for switching applications. It features a max VCEsat of 3V, max IC of 8A, and max power dissipation of 40W. With a package style of FLANGE MOUNT, it operates up to 150 °C and has a transition frequency of 4MHz.

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Digiode

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Native Components

USA . 165 parts In-Stock

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Northwest PG Solutions

USA . 1,533 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,852 parts In-Stock

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SupplyDigital Components

Austria . 6,733 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 5,157 parts In-Stock

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Problanco Electronics

Mexico . 3,198 parts In-Stock

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Corphita

USA . 2,896 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 512 parts In-Stock

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Corohmni

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Overview

Discover the power of the FJPF13007H1 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a single configuration and NPN polarity, this product offers reliable performance with a maximum collector-emitter voltage of 400V and a maximum collector current of 8A. Manufactured by Onsemi, known for their superior quality and innovation, this transistor ensures optimal functionality and efficiency. Whether you're in the automotive, industrial, or consumer electronics industry, this transistor provides value, benefits, and advantages that will elevate your projects to the next level. Choose the FJPF13007H1 for unparalleled performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and insulation, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product compatible with many existing designs.

Configuration: SINGLE

Simplifies circuit design and integration, offering ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Maximum VCEsat: 3 V

Low VCEsat minimizes power loss in switching operations, enhancing efficiency.

Package Shape: RECTANGULAR

Provides a standard form factor for easy mounting and integration.

Terminal Form: THROUGH-HOLE

Ensures secure and stable connections in circuit boards.

Maximum Fall Time (tf): 700 ns

Fast fall time enables quick switching, suitable for high-speed applications.

No. of Terminals: 3

Simplified three-terminal design for straightforward circuit connections.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design for secure installation and improved heat dissipation.

Minimum DC Current Gain (hFE): 15

A high DC current gain ensures reliable amplification and switching capabilities.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environments.

Maximum Collector-Emitter Voltage: 400 V

High VCEO rating for handling high voltages in various applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation.

Maximum Turn On Time (ton): 1600 ns

Quick turn-on time ensures fast response in switching operations.

Maximum Collector Current (IC): 8 A

High collector current rating for handling substantial load currents.

Maximum Turn Off Time (toff): 3700 ns

Sufficient turn-off time for smooth switching transitions.

Terminal Position: SINGLE

Single terminal position for straightforward connections in circuits.

Case Connection: ISOLATED

Isolated case connection provides safety and prevents electrical interference.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency for reliable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJPF13007H1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

Maximum Fall Time (tf):

700 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3700 ns

Maximum Turn On Time (ton):

1600 ns

Maximum VCEsat:

3 V

Trade Compliance

FJPF13007H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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