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BC490ZL1

Onsemi

BC490ZL1 by Onsemi

BC490ZL1 by Onsemi is a PNP BJT transistor with hFE of 60, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,476 parts In-Stock

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Vyrian

USA . 403 parts In-Stock

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403

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Native Components

USA . 241 parts In-Stock

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$0.952

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241

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Northwest PG Solutions

USA . 283 parts In-Stock

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$1.048

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283

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TANS Electronics

Latvia . 7,076 parts In-Stock

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Problanco Electronics

Mexico . 5,950 parts In-Stock

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Kulean Microsystems

USA . 4,194 parts In-Stock

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Corphita

USA . 1,481 parts In-Stock

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SupplyDigital Components

Austria . 1,358 parts In-Stock

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UHIMA Technologies

Türkiye . 496 parts In-Stock

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Corohmni

South Africa . 361 parts In-Stock

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Overview

Enhance your electronic projects with the BC490ZL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this PNP transistor is perfect for switching applications. With a DC current gain of 60 and a maximum operating temperature of 150 °C, this transistor provides exceptional value and benefits to customers looking for a durable and efficient solution. Upgrade your designs with the BC490ZL1 and experience the advantages of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, enhancing its durability and reliability over time.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power and switching applications, making this transistor suitable for a variety of circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Package Shape: ROUND

The round package shape ensures easy mounting and installation, making it convenient for use in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, simplifying the assembly process for the end user.

No. of Terminals: 3

With three terminals, this transistor allows for more flexible circuit configurations and applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, making this transistor suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 60

A higher minimum DC current gain ensures more stable and predictable transistor behavior in amplification and switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and operate reliably in harsh environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows this transistor to handle high voltage loads, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistors offer high performance and efficiency, making this transistor a reliable choice for various electronic applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5 A of collector current, this transistor is suitable for medium-power applications and can drive moderate loads.

Terminal Finish: TIN LEAD

The tin-lead terminal finish ensures good solderability and conductivity, making it easier to connect this transistor in circuit assemblies.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and component placement, enabling easier integration of this transistor in electronic designs.

Nominal Transition Frequency (fT): 150 MHz

With a high nominal transition frequency, this transistor offers fast response times and high-frequency operation, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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