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BC490RL1

Onsemi

BC490RL1 by Onsemi

BC490RL1 by Onsemi is a PNP BJT transistor with hFE of 60, VCEO of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,377 parts In-Stock

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Vyrian

USA . 145 parts In-Stock

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145

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SupplyDigital Components

Austria . 7,680 parts In-Stock

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Problanco Electronics

Mexico . 7,172 parts In-Stock

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TANS Electronics

Latvia . 3,715 parts In-Stock

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Corphita

USA . 1,111 parts In-Stock

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Native Components

USA . 972 parts In-Stock

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Corohmni

South Africa . 495 parts In-Stock

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495

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Northwest PG Solutions

USA . 396 parts In-Stock

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UHIMA Technologies

Türkiye . 195 parts In-Stock

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Kulean Microsystems

USA . 114 parts In-Stock

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Overview

Enhance your electronic projects with the BC490RL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, a trusted brand known for its reliable components, this PNP transistor offers superior performance and durability. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 60, this transistor is ideal for various applications in the electronics industry. Upgrade your circuits with the BC490RL1 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and handling conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred or required.

Configuration: SINGLE

Simplifies circuit design and integration as only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in those scenarios.

Package Shape: ROUND

Allows for efficient layout and placement within circuits.

Terminal Form: THROUGH-HOLE

Enables easy and secure mounting onto a PCB.

No. of Terminals: 3

Simplifies connections and reduces complexity in circuit design.

Package Style (Meter): CYLINDRICAL

Provides a compact form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 60

Ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 80 V

Can handle moderate voltage levels within the circuit.

Transistor Element Material: SILICON

Provides high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels in the circuit.

Terminal Finish: TIN LEAD

Ensures good electrical conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and integration into the circuit.

Nominal Transition Frequency (fT): 150 MHz

Indicates high frequency capability for fast switching and signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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