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BC490AZL1G

Onsemi

BC490AZL1G by Onsemi

BC490AZL1G by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 1.5W, and max collector-emitter voltage of 80V. Ideal for switching applications, it has a min DC current gain of 100 and operates at temperatures up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Pegasus Components GmbH

Germany . 1,500 parts In-Stock

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Vyrian

USA . 819 parts In-Stock

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Digiode

USA . 338 parts In-Stock

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Native Components

USA . 969 parts In-Stock

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SupplyDigital Components

Austria . 7,133 parts In-Stock

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Kulean Microsystems

USA . 6,948 parts In-Stock

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TANS Electronics

Latvia . 5,017 parts In-Stock

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Problanco Electronics

Mexico . 2,785 parts In-Stock

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Corphita

USA . 2,317 parts In-Stock

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Northwest PG Solutions

USA . 960 parts In-Stock

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UHIMA Technologies

Türkiye . 844 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the BC490AZL1G small signal bipolar junction transistor. Perfect for switching applications, this PNP transistor offers a single configuration in a durable plastic/epoxy package. With a maximum power dissipation of 1.5W and a minimum DC current gain of 100, this transistor provides excellent performance and efficiency. Trust Onsemi for cutting-edge technology and innovation in the world of electronic components. Choose the BC490AZL1G for all your switching needs and experience the value and benefits that Onsemi has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, increasing its reliability and longevity.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs, offering flexibility in circuit applications.

Configuration: SINGLE

Simplifies circuit design and reduces the complexity of the overall system.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum Power Dissipation (Abs): 1.5 W

Can handle higher power dissipation levels, making it suitable for applications that require higher power handling capabilities.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, making it suitable for industrial and automotive applications where temperature can vary.

Maximum Collector-Emitter Voltage: 80 V

Can handle higher voltage levels, expanding the range of applications it can be used in.

Minimum DC Current Gain (hFE): 100

Provides high current gain, ensuring efficient amplification of signals in various circuits.

Nominal Transition Frequency (fT): 150 MHz

Offers high transition frequency, enabling fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490AZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490AZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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