Loading...

BC490AZL1

Onsemi

BC490AZL1 by Onsemi

BC490AZL1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V, ideal for switching applications. Featuring a min. DC current gain of 100 and max. power dissipation of 0.625W, it operates at up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Zilex Electronics Inc.

Canada . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Manotoh

Italy . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800

-

-

-

-

Digiode

USA . 771 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

771

-

-

-

-

Vyrian

USA . 101 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

101

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 675 parts In-Stock

1+ parts

$0.032

100+ parts

-

1k+ parts

-

10k+ parts

$0.031

675

$0.032

-

-

$0.031

Kulean Microsystems

USA . 7,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,765

-

-

-

-

SupplyDigital Components

Austria . 6,949 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,949

-

-

-

-

Problanco Electronics

Mexico . 4,838 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,838

-

-

-

-

Corphita

USA . 2,460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,460

-

-

-

-

Northwest PG Solutions

USA . 1,838 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,838

-

-

-

-

TANS Electronics

Latvia . 1,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,016

-

-

-

-

UHIMA Technologies

Türkiye . 911 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

911

-

-

-

-

Assy Fe

Spain . 418 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

418

-

-

-

-

Corohmni

South Africa . 168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

168

-

-

-

-

Overview

Discover the BC490AZL1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. Manufactured by Onsemi, known for their cutting-edge technology and innovation, this PNP transistor is perfect for switching applications. With a maximum collector current of 1A and a nominal transition frequency of 150MHz, this transistor delivers exceptional power dissipation and efficiency. Trust Onsemi to provide you with the best components for your electronics projects. Upgrade to the BC490AZL1 today and experience the difference in performance and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

Simplified design and ease of use for applications requiring a single transistor configuration.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in such tasks.

Package Shape: ROUND

Round shape allows for easy mounting and integration into various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and easy installation on circuit boards.

No. of Terminals: 3

Simplified connection setup with only 3 terminals, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.625 W

Handles up to 0.625W of power dissipation, suitable for a range of low to medium power applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-efficient, ideal for applications with limited space.

Minimum DC Current Gain (hFE): 100

High DC current gain of 100 ensures stable and consistent amplification in various electronic circuits.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150 °C allows for reliable performance in high-temperature environments.

Maximum Collector-Emitter Voltage: 80 V

With a maximum voltage rating of 80V, suitable for a range of voltage requirements in electronic circuits.

Transistor Element Material: SILICON

Silicon-based transistor element provides high performance and efficiency in electronic circuits.

Maximum Collector Current (IC): 1 A

Handles up to 1A of collector current, making it suitable for medium to high current applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures a reliable connection and solderability on circuit boards.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to integrate into circuit boards and ensures secure connections.

Peak Reflow Temperature °C: 235

Withstands peak reflow temperatures up to 235 °C, ensuring stable performance during manufacturing processes.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150MHz allows for fast and efficient switching in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490AZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490AZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20