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BC490ARL

Onsemi

BC490ARL by Onsemi

BC490ARL by Onsemi is a PNP BJT transistor with hFE of 100, VCE of 80V, and fT of 150MHz. Ideal for switching applications due to its single configuration and cylindrical package style. Operates at temperatures up to 150 °C with a collector current of 0.5A.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Vyrian

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SupplyDigital Components

Austria . 8,141 parts In-Stock

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Kulean Microsystems

USA . 3,539 parts In-Stock

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Problanco Electronics

Mexico . 2,119 parts In-Stock

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Northwest PG Solutions

USA . 1,933 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 579 parts In-Stock

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Corohmni

South Africa . 358 parts In-Stock

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UHIMA Technologies

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Overview

Dive into a world of seamless switching applications with the BC490ARL by Onsemi. Crafted with precision and quality in mind, this Small Signal Bipolar Junction Transistor boasts a PNP configuration that guarantees optimal performance. From its plastic/epoxy package body material to its impressive maximum collector-emitter voltage of 80V, this transistor is designed to handle the toughest tasks with ease. Whether you're looking to enhance your circuit designs or streamline your electronic projects, the BC490ARL offers unbeatable value and performance that will elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switches, making this transistor a good choice for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes integration easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: ROUND

The round shape allows for easy mounting and integration into various systems and designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals enable easy soldering and connection to circuit boards.

No. of Terminals: 3

The 3 terminals provide the necessary connections for proper functioning in a circuit.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and efficient form factor for space-constrained applications.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures amplification and reliable operation in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows for use in various voltage levels without risk of breakdown.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability, efficiency, and performance in electronic circuits.

Maximum Collector Current (IC): 0.5 A

Capable of handling a maximum collector current of 0.5 A, making it suitable for low to medium power applications.

Terminal Finish: TIN LEAD

The tin lead finish ensures good solderability and electrical conductivity for reliable connections.

Terminal Position: BOTTOM

The bottom terminal position offers easy PCB mounting and integration in circuit designs.

Nominal Transition Frequency (fT): 150 MHz

With a high nominal transition frequency, this transistor is capable of fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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