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BC490ARLRE

Onsemi

BC490ARLRE by Onsemi

BC490ARLRE by Onsemi is a PNP BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C and has an fT of 150MHz. Its through-hole package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,453 parts In-Stock

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Vyrian

USA . 1,268 parts In-Stock

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Native Components

USA . 682 parts In-Stock

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$0.067

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$0.064

682

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$0.064

Northwest PG Solutions

USA . 1,704 parts In-Stock

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$0.074

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$0.065

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$0.074

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$0.065

SupplyDigital Components

Austria . 5,397 parts In-Stock

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Problanco Electronics

Mexico . 4,848 parts In-Stock

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TANS Electronics

Latvia . 3,325 parts In-Stock

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Corphita

USA . 1,899 parts In-Stock

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1,899

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UHIMA Technologies

Türkiye . 908 parts In-Stock

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Kulean Microsystems

USA . 626 parts In-Stock

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Corohmni

South Africa . 97 parts In-Stock

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Overview

Enhance your electronic projects with the BC490ARLRE by Onsemi, a top-quality Small Signal Bipolar Junction Transistor offering reliable performance and durability. Manufactured by industry leader Onsemi, this PNP transistor is perfect for switching applications, providing seamless operation and efficiency. With a minimum DC current gain of 100 and a maximum collector-emitter voltage of 80V, this transistor guarantees optimal functionality. Whether you're a hobbyist or a professional, the BC490ARLRE delivers value, benefits, and advantages that will enhance your projects and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring efficient and reliable performance in such applications.

Package Shape: ROUND

The round shape allows for easy mounting and installation, making it convenient for use in different setups.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering during installation.

No. of Terminals: 3

Simple 3-terminal configuration for easy connection and integration in circuits.

Minimum DC Current Gain (hFE): 100

High current gain ensures amplification of weak signals and efficient signal switching.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 80 V

Can handle high voltage levels, ensuring reliable operation in various circuit designs.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and high reliability for the transistor.

Maximum Collector Current (IC): 0.5 A

Can handle moderate collector currents, suitable for various switching applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast signal switching and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490ARLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490ARLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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