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BC490A

Onsemi

BC490A by Onsemi

BC490A by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1A. With a min. DC current gain of 100, it's ideal for switching applications at up to 150 °C operating temperature in through-hole packages.

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Lifecycle Status

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6

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1k+

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ComSIT Distribution GmbH

Germany . 5,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4,000 parts In-Stock

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Digiode

USA . 2,329 parts In-Stock

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Vyrian

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ECAB

Sweden . 360 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 153 parts In-Stock

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Native Components

USA . 537 parts In-Stock

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Perfect Parts

USA . 20,160 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 9,000 parts In-Stock

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Kulean Microsystems

USA . 7,771 parts In-Stock

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Glotronic Ltd.

UK . 3,200 parts In-Stock

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SupplyDigital Components

Austria . 2,715 parts In-Stock

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Problanco Electronics

Mexico . 2,588 parts In-Stock

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Northwest PG Solutions

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Corphita

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UHIMA Technologies

Türkiye . 702 parts In-Stock

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TANS Electronics

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Enhance your electronic projects with the Onsemi BC490A transistor! Known for its top-notch quality and reliability, Onsemi delivers high-performance small signal bipolar junction transistors like no other. Ideal for switching applications, this PNP transistor offers a seamless single configuration in a convenient round package. With a maximum operating temperature of 150 °C and a collector-emitter voltage of 80V, the BC490A transistor is perfect for various projects that require efficient power dissipation and reliable performance. Upgrade your circuits with the BC490A and experience the value, benefits, and advantages that come with using a trusted Onsemi product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP design allows for easy integration into circuits and provides flexibility in design options.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: ROUND

The round shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections, making the transistor suitable for applications with mechanical stress.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuits and provides flexibility in routing connections.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle significant loads without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and compact design.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures the transistor amplifies input signals effectively.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand tough environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage allows the transistor to be used in a wide range of applications.

Transistor Element Material: SILICON

Silicon is a reliable and commonly used material for transistor elements, ensuring stable performance.

Maximum Collector Current (IC): 1 A

With a high maximum collector current, this transistor can handle significant current loads.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection in various circuits and devices.

Peak Reflow Temperature °C: 235

The high peak reflow temperature indicates the transistor can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency indicates fast switching speeds and high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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