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BC490ARLRA

Onsemi

BC490ARLRA by Onsemi

BC490ARLRA by Onsemi is a PNP BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C and has an fT of 150MHz. Its through-hole package makes it suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,265 parts In-Stock

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2,265

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Digiode

USA . 1,826 parts In-Stock

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1,826

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Kulean Microsystems

USA . 6,362 parts In-Stock

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6,362

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SupplyDigital Components

Austria . 3,600 parts In-Stock

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3,600

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TANS Electronics

Latvia . 3,294 parts In-Stock

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Northwest PG Solutions

USA . 2,001 parts In-Stock

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2,001

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Problanco Electronics

Mexico . 1,850 parts In-Stock

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1,850

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Corphita

USA . 581 parts In-Stock

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581

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Native Components

USA . 477 parts In-Stock

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477

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Corohmni

South Africa . 360 parts In-Stock

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UHIMA Technologies

Türkiye . 266 parts In-Stock

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Overview

Unleash the power of innovation with the BC490ARLRA by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their Small Signal Bipolar Junction Transistors (BJT). Ideal for switching applications, this PNP transistor offers seamless performance with a minimum DC current gain of 100 and a maximum collector-emitter voltage of 80V. With a maximum operating temperature of 150 °C, this transistor is a versatile solution for a wide range of electronic projects. Elevate your designs with the BC490ARLRA and experience unparalleled value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high power amplification and switching applications, offering efficiency and reliability.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient performance in electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in demanding environments and applications.

Maximum Collector-Emitter Voltage: 80 V

Allows for high voltage operation, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency enables fast switching speeds, making it ideal for high frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490ARLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490ARLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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