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BC490RLRA

Onsemi

BC490RLRA by Onsemi

BC490RLRA by Onsemi is a PNP BJT transistor with hFE of 60, VCEO of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,552 parts In-Stock

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Digiode

USA . 1,194 parts In-Stock

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SupplyDigital Components

Austria . 7,014 parts In-Stock

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Kulean Microsystems

USA . 2,700 parts In-Stock

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Corphita

USA . 1,588 parts In-Stock

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Problanco Electronics

Mexico . 1,058 parts In-Stock

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Northwest PG Solutions

USA . 838 parts In-Stock

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TANS Electronics

Latvia . 485 parts In-Stock

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Corohmni

South Africa . 468 parts In-Stock

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UHIMA Technologies

Türkiye . 253 parts In-Stock

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Overview

Upgrade your electronic devices with the BC490RLRA by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 80V, this PNP transistor offers reliability and efficiency in various electronic circuits. Manufactured by Onsemi, a trusted name in the industry, this transistor guarantees superior performance and long-lasting durability. Enhance your projects with the BC490RLRA and experience the benefits of high DC current gain, fast transition frequency, and easy installation with its through-hole terminals. Elevate your designs with this versatile component that delivers exceptional value and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs and enhances compatibility with other components.

Configuration: SINGLE

Simplified design and operation, ideal for straightforward circuit layouts and applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: ROUND

Compact and space-saving design suitable for various mounting configurations.

Terminal Form: THROUGH-HOLE

Easy to install and solder onto PCBs, providing secure connections for stable operation.

No. of Terminals: 3

Simplified connection options without unnecessary terminals, enabling easier integration into circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical shape for efficient heat dissipation and space-saving benefits in compact electronic devices.

Minimum DC Current Gain (hFE): 60

Ensures reliable and consistent performance in amplification applications with a minimum gain of 60.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for demanding environments and applications.

Maximum Collector-Emitter Voltage: 80 V

Capable of handling higher voltages, providing versatility and compatibility in various circuit designs.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and efficiency in electronic circuits.

Maximum Collector Current (IC): 0.5 A

Capable of handling current up to 0.5A, suitable for low-power applications and circuit designs.

Terminal Finish: TIN LEAD

Tin lead finish for reliable solder connections and corrosion resistance, ensuring long-term performance.

Terminal Position: BOTTOM

Bottom terminal position for easy and secure connections in circuit layouts and PCB designs.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast and efficient signal processing, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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