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BC490ARLRM

Onsemi

BC490ARLRM by Onsemi

BC490ARLRM by Onsemi is a PNP BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C with fT of 150MHz. Its through-hole package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,482 parts In-Stock

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Vyrian

USA . 625 parts In-Stock

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625

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Kulean Microsystems

USA . 6,658 parts In-Stock

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SupplyDigital Components

Austria . 5,356 parts In-Stock

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Problanco Electronics

Mexico . 5,088 parts In-Stock

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TANS Electronics

Latvia . 3,026 parts In-Stock

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Corphita

USA . 845 parts In-Stock

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845

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UHIMA Technologies

Türkiye . 434 parts In-Stock

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Native Components

USA . 212 parts In-Stock

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Corohmni

South Africa . 133 parts In-Stock

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Northwest PG Solutions

USA . 13 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the BC490ARLRM by Onsemi! Manufactured by a trusted industry leader, this Small Signal Bipolar Junction Transistor offers reliable performance for switching applications. With a high DC current gain and maximum operating temperature of 150 °C, this PNP transistor provides exceptional value and versatility. Whether you're a hobbyist or professional, trust the BC490ARLRM to deliver the quality and performance you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package provides good insulating properties and durability, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and provides compatibility with other PNP devices, enhancing design flexibility.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and is ideal for controlling high-speed circuits.

Package Shape: ROUND

The round package shape provides mechanical stability and efficient heat dissipation, ensuring reliable performance in different operating conditions.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers easy soldering and secure connections, making it convenient for manual or automated assembly processes.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected to external components and integrated into various circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient space utilization and easy mounting, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor provides high amplification capabilities and ensures stable and reliable circuit operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in various temperature environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 80 V

The 80V maximum collector-emitter voltage rating ensures safe operation in higher voltage applications, providing protection against voltage spikes.

Transistor Element Material: SILICON

The silicon material used in the transistor element offers high thermal conductivity, allowing for efficient heat dissipation and improved performance.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current loads, making it suitable for various power control applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and prolonged device lifespan.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and routing, making it easier to integrate into circuit designs and reducing assembly complexity.

Nominal Transition Frequency (fT): 150 MHz

With a nominal transition frequency of 150 MHz, this transistor offers high-speed performance and is suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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