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BC490

Onsemi

BC490 by Onsemi

BC490 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1A. It has a min. DC current gain of 60, making it ideal for switching applications at up to 150 °C operating temperature. Packaged in plastic/epoxy, it features a cylindrical shape with through-hole terminals for easy installation.

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Lifecycle Status

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J2 Sourcing AB

Sweden . 20,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 8,000 parts In-Stock

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ABC Electronics Ltd.

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Digiode

USA . 777 parts In-Stock

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ComSIT Distribution GmbH

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Fibra_Brandt Electronic GMBH

Germany . 296 parts In-Stock

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Vyrian

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Manotoh

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LittleDiode

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Native Components

USA . 909 parts In-Stock

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Northwest PG Solutions

USA . 1,912 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 7,807 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 4,558 parts In-Stock

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Glotronic Ltd.

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Kulean Microsystems

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Corphita

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Corohmni

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UHIMA Technologies

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Overview

Get ready to elevate your electronic projects with the BC490 by Onsemi! As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers top-notch quality and reliability to ensure optimal performance. Whether you're looking for a transistor for switching applications or need a PNP configuration, the BC490 has got you covered. Its maximum collector-emitter voltage of 80V and maximum collector current of 1A make it a versatile choice for a wide range of projects. Trust in Onsemi to provide you with the value and benefits you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and heat resistance, ensuring a reliable performance over extended periods of time.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in high-side switching applications, making this transistor suitable for various switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into different electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for use in various electronic circuits.

Maximum Power Dissipation: 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle relatively high power levels without overheating, ensuring reliable performance under load.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments, making it suitable for use in a variety of applications.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating of 80V allows this transistor to be used in circuits with higher voltage levels, increasing its versatility in different applications.

Maximum Collector Current: 1 A

With a maximum collector current of 1 A, this transistor can handle relatively high current levels, making it suitable for use in circuits that require high power output.

Nominal Transition Frequency: 150 MHz

The high nominal transition frequency of 150 MHz indicates the speed at which this transistor can switch on and off, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC490 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC490 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-743-6654, 5961997436654

NIIN

997436654

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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